Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-20T06:39:47.990Z Has data issue: false hasContentIssue false
  • English
  • Français

Porosity and its Effect on Barrier Performance of Thin Electroless Cobalt Alloy Caps

Published online by Cambridge University Press:  01 February 2011

Qingyun Chen ,
Jun Liu ,
Elizabeth Walker ,
Richard Hurtubise ,
Daniel Stritch  and
Xuan Lin
Qingyun Chen
Affiliation:
[email protected], Cookson Electronics/Enthone Inc., R & D, 350 Frontage Road, West Haven, CT, 06516, United States, 203-799-4906
Jun Liu
Affiliation:
[email protected], ATMI, R & D, 7 Commerce Drive, Danbury, CT, 06810, United States
Elizabeth Walker
Affiliation:
[email protected], ATMI, R & D, 7 Commerce Drive, Danbury, CT, 06810, United States
Richard Hurtubise
Affiliation:
[email protected], Cookson Electronics/Enthone Inc., R & D, 350 Frontage Road, West Haven, CT, 06516, United States
Daniel Stritch
Affiliation:
[email protected], Cookson Electronics/Enthone Inc., R & D, 350 Frontage Road, West Haven, CT, 06516, United States
Xuan Lin
Affiliation:
[email protected], Cookson Electronics/Enthone Inc., R & D, 350 Frontage Road, West Haven, CT, 06516, United States
Get access

Abstract

Pinhole densities of electroless cobalt alloy films on copper substrate are characterized using optical and electrochemical methods. The impact of pits or pinholes on deposit film barrier property is discussed. The improved film barrier property is shown by reduction of pits formation through deposition process optimization.

Keywords

porositybarrier layercorrosion
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B08-15
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Kohn, A., Eizenberg, M., Shacham-Diamand, Y. et al., Materials Sci. and Eng. A302, P.18 (2001).Google Scholar
2 Singer, P., Semiconductor International, Oct. 1, 2005.Google Scholar
3 Kohn, A., Eizenberg, M., Shacham-Diamand, Y. et al., J. of Applied Physics, Vol.2, No. 9, P.5508.Google Scholar
4 Chen, Q., Valverde, C., et al., ECS Transactions Vol.2, Issue 6, p. 61 (2006).Google Scholar
5 Chen, Q., Valverde, C., et al., ECS Transactions Vol.2, Issue 6, p. 43 (2006).Google Scholar
6 Decorps, T., Haumesser, P.H., Peyne, C., et al., AMC Proc., 2004, P. 823.Google Scholar
7 Gambino, J., Wynne, J., Gill, J., et al., Microelec. Eng., vol. 83, 2006, P. 2059.Google Scholar
8 Decorps, T., Haumesser, P.H., Olivier, S., et al., Microelec. Eng., vol. 83, 2006, P. 2082.Google Scholar