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Pore Seal Property of Ultra-thin Layer for Porous Low-k Films revealed by Ellipsometric Porosimetry

Published online by Cambridge University Press:  30 July 2012

Shoko Sugiyama Ono ,
Yasuhisa Kayaba ,
Tsuneji Suzuki ,
Hirofumi Tanaka  and
Kazuo Kohmura
Shoko Sugiyama Ono
Affiliation:
R&D Center, Mitsui Chemicals, Inc., 580-32, Nagaura, Sodegaura, Chiba, 299-0265, Japan
Yasuhisa Kayaba
Affiliation:
R&D Center, Mitsui Chemicals, Inc., 580-32, Nagaura, Sodegaura, Chiba, 299-0265, Japan
Tsuneji Suzuki
Affiliation:
R&D Center, Mitsui Chemicals, Inc., 580-32, Nagaura, Sodegaura, Chiba, 299-0265, Japan
Hirofumi Tanaka
Affiliation:
R&D Center, Mitsui Chemicals, Inc., 580-32, Nagaura, Sodegaura, Chiba, 299-0265, Japan
Kazuo Kohmura
Affiliation:
R&D Center, Mitsui Chemicals, Inc., 580-32, Nagaura, Sodegaura, Chiba, 299-0265, Japan
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Abstract

It was found for the first time that the control of the size of pore sealant is important to prevent diffusions of pore sealant into pores of porous low-k films and to achieve a good toluene seal property. Two pore sealants (PS-A, B) were prepared and the seal property and porous structure were studied using toluene based ellipsometric porosimetry (EP) measurements. It was revealed that small pore sealant (PS-B) diffuses into pores of porous low-k (PLK) films and did not show any seal property, while large pore sealant (PS-A) does not diffuse into pores of porous low-k films and shows a good toluene seal property. Ellipsometry shows that PS-A forms conformal layer only on the vicinity of surface of porous low-k films, but porous structure of porous low-k films at the bottom part is kept, according the fact that the refractive index did not increase.

Furthermore, we developed a new pore seal material (PS-C) to form ultra-thin conformal layer by a single pass, which shows a good toluene seal property. The dielectric constant increased from 2.10 to 2.25 by covering with PS-C. The obtained layer also shows the effect as the protect layer of porous low-k films from plasma damages.

Keywords

barrier layerdielectricsolution deposition
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1428: Symposium C – Interconnect Challenges for CMOS Technology—Materials, Processes and Reliability for Downscaling, Packaging and 3D Stacking , 2012 , mrss12-1428-c01-04
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Caro, A. M., Maes, G., Borghs, G., and Whelan, C., Microelectron. Eng. 85(10), 2047–2050 (2008).Google Scholar
2. Gandhi, D. D., Lane, M., Zhou, Y., Singh, A. P., Nayak, S., Tisch, U., Eizenberg, M., and Ramanath, G., Nature 447(7142), 299–U292 (2007).Google Scholar
3. Ganesa, P. G., Singh, A. P., and Ramanath, G., Appl. Phys. Lett. 85(4), 579–581 (2004).Google Scholar
4. Caro, A. M., Maes, G., Borghs, G., Armini, S., and Travaly, Y., Mater. Res. Soc. Symp. Proc. 1249-F02-01 (2010).Google Scholar
5. George, S. M., Yoon, B., and Dameron, A. A., Acc. Chem. Res. 42(4), 498–508 (2009).Google Scholar
6. Loscutoff, P. W., Zhou, H., Clendenning, S. B., and Bent, S. F., ACS Nano 4(1), 331–341 (2010).Google Scholar
7. Loscutoff, P. W., Clendenning, S. B., and Bent, S. F., Mater. Res. Soc. Symp. Proc. 1249-F02-03 (2010).Google Scholar
8. Hijioka, K., Inoue, N., Kume, I., Kawahara, J., Furutake, N., Shirai, H., Itoh, T., Ogura, T., Kazama, K., Yamamoto, Y., Kasama, Y., Katsuyama, H., Manabe, K., Yamamoto, H., Saito, S., Hase, T., and Hayashi, Y., IEDM10–756.Google Scholar
9. Frot, T., Volksen, W., Purushothaman, S., Bruce, R., Dubois, G., Adv. Mater. 23, 2828–2832 (2011)Google Scholar
10. Ono, S. S., Kohmura, K., Tanaka, H., Nakayama, K., Kagayama, A., Tsuchiya, T., Nakaura, M., Matsuoka, O., Takaki, T. and Maekawa, K., Mater. Res. Soc. Symp. Proc. 1249-F06-03 (2010).Google Scholar
11. Ono, S. S., Kohmura, K., Tanaka, H., Kayaba, Y., Kikkawa, T. Mater. Res. Soc. Symp. Proc. 1335, 21 (2011).Google Scholar
12. Baklanov, M. R., Mogilnikov, K. P., Yim, J.-H., Mat. Res. Soc. Symp. Proc. 812, F5.4.1, (2004)Google Scholar