Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-27T11:33:57.431Z Has data issue: false hasContentIssue false

Polysilicon Films Formed on Metal Sheets by Aluminium Induced Crystallization of Amorphous Silicon: Barrier Effect

Published online by Cambridge University Press:  31 January 2011

Prathap Pathi
Affiliation:
[email protected], CNRS, InESS, Strasbourg, France
Ozge Tüzün
Affiliation:
[email protected], CNRS, InESS, Strasbourg, France
Abdelilah Slaoui
Affiliation:
[email protected], CNRS, InESS-CNRS, Strasbourg, 67037, France
Get access

Abstract

Polycrystalline silicon (pc-Si) thin films have been synthesized by aluminium induced crystallization (AIC) of amorphous silicon (a-Si) at low temperatures (≤500°C) on flexible metallic substrates for the first time. Different diffusion barrier layers were used to prepare stress free pc-Si films as well as to evaluate the effective barrier against substrate impurity diffusion. The layers of aluminum (Al) and then amorphous silicon with the thickness of 0.27 μm and 0.37 μm were deposited on barrier coated metal sheets by means of an electron beam evaporation and PECVD, respectively. The bi-layers were annealed in a tube furnace at different temperatures (400-500°C) under nitrogen flow for different time periods (1-10hours). The degree of crystallinity of the as-grown layers was monitored by micro-Raman and reflectance spectroscopies. Structure, surface morphology and impurity analysis were carried out by X-ray diffraction, scanning electron microscopy (SEM) and EDAX, respectively. The X-ray diffraction measurements were used to determine the orientation of grains. The results show that the AIC films on metal sheets are polycrystalline and the grains oriented in (100) direction preferentially. However, the properties of AIC films are highly sensitive to the surface roughness.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Slaoui, A. Siffert, P. in “Silicon: Evolution and Future of a Technology”, Springer Verlag Ed., edited by Siffert, P. Krimmel, E.F. (2004), pp.45.Google Scholar
2 Gleskova, H. Cheng, I. Wagner, S. Sturm, J.C. and Suo, Z. Sol. Energy 80, 687(2006).Google Scholar
3 Hutchinson, J.W. and Suo, Z. Adv. Appl. Mech., 29, 63(1992).Google Scholar
4 Slaoui, A. Pihan, E. and Focsa, A. Solar Energy Materials and Solar Cells, 90, 1542(2006).Google Scholar
5 Harbeke, G. Polycrystalline semiconductors, Springer Series in Solid-State Science, 57, 156(1985).Google Scholar
6 Ekanayake, G. and Reehal, H.S. Vacuum, 81, 272(2006).Google Scholar
7 Kitahara, K. Moritani, A. Hara, A. and Okabe, M. Jpn. J. Appl. Phys., 38, L1312 (1999).Google Scholar
8 Paillard, V. Puech, P. and Laguna, M. A. Temple-Boyer, P., Mauduit, B. de, Appl. Phys. Lett. 73, 1718(1998).Google Scholar
9 Tuzun, O. Auger, J.M. Gordon, I. Focsa, A. Montgomery, P.C. Maurice, C. Slaoui, A. Beaucarne, G. Poortmans, J. Thin Solid Films, 516, 6882(2008).Google Scholar
10 Lengsfeld, P. and Nickel, N.H. J. Non-Cryst. Solids, 299302, 778(2002).Google Scholar
11 Joubert, P. Loisel, B. Chouan, Y. Haji, L. J. Electrochem. Soc., 134, 2541(1987).Google Scholar
12 Pihan, E. Slaoui, A. Maurice, C. Journal of Crystal Growth 305, 88(2007).Google Scholar
13 Saif, M.T.A. Zhang, S. Haque, A. Hsia, K.J. Acta. Mater., 50, 2779(2002).Google Scholar