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Poly-SiGe, a superb material for MEMS

Published online by Cambridge University Press:  01 February 2011

Ann Witvrouw ,
Maria Gromova ,
Anshu Mehta ,
Sherif Sedky ,
Piet De Moor ,
Kris Baert  and
Chris van Hoof
Ann Witvrouw
Affiliation:
IMEC, Kapeldreef 75, B3001 Leuven (Belgium)
Maria Gromova
Affiliation:
IMEC, Kapeldreef 75, B3001 Leuven (Belgium)
Anshu Mehta
Affiliation:
IMEC, Kapeldreef 75, B3001 Leuven (Belgium)
Sherif Sedky
Affiliation:
IMEC, Kapeldreef 75, B3001 Leuven (Belgium) Physics Department, The American University in Cairo, P.O. Box 2511 Cairo, Egypt
Piet De Moor
Affiliation:
IMEC, Kapeldreef 75, B3001 Leuven (Belgium)
Kris Baert
Affiliation:
IMEC, Kapeldreef 75, B3001 Leuven (Belgium)
Chris van Hoof
Affiliation:
IMEC, Kapeldreef 75, B3001 Leuven (Belgium)
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Abstract

In this overview article several MEMS applications of poly-SiGe are discussed: thermal applications, the application as a capping layer for MEMS wafer-level packaging and the use as MEMS structural layer for processing MEMS devices on top of CMOS. For all these applications also different deposition processes have been developed: chemical vapor deposition at reduced pressure (RPCVD), at low pressure (LPCVD) and with plasma enhancement (PECVD). Special techniques to reduce the processing temperature to the absolute minimum are reviewed as well: the use of hydrogenated microcrystalline SiGe, of metal-induced crystallization and of laser annealing. The latter methods are important when one wants to process SiGe MEMS above advanced CMOS with low-permittivity dielectrics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 782: Symposium A – Micro- and Nanosystems , 2003 , A2.1
Copyright
Copyright © Materials Research Society 2004

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