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Poly-Si Thin Film Transistors Fabricated By Employing Selective Si Ion-Implantation And Excimer Laser Annealing

Published online by Cambridge University Press:  17 March 2011

Min-Cheol Lee ,
Jae-Hong Jeon ,
Jin-Woo Park  and
Min-Koo Han
Min-Cheol Lee
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, KOREA
Jae-Hong Jeon
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, KOREA
Jin-Woo Park
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, KOREA
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, KOREA
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Abstract

A new excimer laser annealing method is proposed in order to produce the poly-Si film with low defect density and large grain, by combining the selective Si ionimplantation and excimer laser annealing. Selective Si ion-implantation is employed to form artificial nucleation seeds in a-Si film prior to excimer laser annealing in order to increase the nucleation probability. The grain boundary location in poly-Si film has been controlled through implantation mask, and the grain size around micrometer order is obtained without any other process. TEM result shows that grain boundary is controlled according to mask pattern and the crystallinity of the poly-Si film is improved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A25.4
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

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