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Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition

Published online by Cambridge University Press:  11 February 2011

X.B. Zeng ,
X.B. Liao ,
H.W. Diao ,
Z.H. Hu ,
Y.Y. Xu ,
S.B. Zhang ,
C.Y. Chen ,
W.D. Chen  and
G.L. Kong
X.B. Zeng
Affiliation:
State key Laboratory for surface physics, Institute of Semiconductors Chinese Academy of Science, Beijing, 100083, China
X.B. Liao
Affiliation:
State key Laboratory for surface physics, Institute of Semiconductors Chinese Academy of Science, Beijing, 100083, China
H.W. Diao
Affiliation:
State key Laboratory for surface physics, Institute of Semiconductors Chinese Academy of Science, Beijing, 100083, China
Z.H. Hu
Affiliation:
State key Laboratory for surface physics, Institute of Semiconductors Chinese Academy of Science, Beijing, 100083, China
Y.Y. Xu
Affiliation:
State key Laboratory for surface physics, Institute of Semiconductors Chinese Academy of Science, Beijing, 100083, China
S.B. Zhang
Affiliation:
State key Laboratory for surface physics, Institute of Semiconductors Chinese Academy of Science, Beijing, 100083, China
C.Y. Chen
Affiliation:
State key Laboratory for surface physics, Institute of Semiconductors Chinese Academy of Science, Beijing, 100083, China
W.D. Chen
Affiliation:
State key Laboratory for surface physics, Institute of Semiconductors Chinese Academy of Science, Beijing, 100083, China
G.L. Kong
Affiliation:
State key Laboratory for surface physics, Institute of Semiconductors Chinese Academy of Science, Beijing, 100083, China
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Abstract

Polymorphous Si nanowires (SiNWS) have been successfully synthesized on Si wafer by plasma enhanced chemical vapor deposition (PECVD) at 440°C, using silane as the Si source and Au as the catalyst. To grow the polymorphous SiNWS preannealing the Si substrate with Au film at 1100 °C is needed. The diameters of Si nanowires range from 15 to 100 nm. The structure, morphology and chemical composition of the SiNWS have been characterized by high resolution x-ray diffraction, scanning electron microscopy, transmission electron microscopy, as well as energy dispersive x-ray spectroscopy. A few interesting nanowires with Au nanoclusters uniformly distributed in the body of the wire were also produced by this technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F8.7
Copyright
Copyright © Materials Research Society 2003

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References

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