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Polymer-Inorganic High Contrast and High Sensitivity Resists for Nanolithography

Published online by Cambridge University Press:  10 February 2011

Hengpeng Wu ,
Jianzhao Wang  and
Kenneth E. Gonsalves
Hengpeng Wu
Affiliation:
Polymer Program at the Institute of Materials Science, U-3136 & Department of Chemistry, University of Connecticut, Storrs, CT 06269–3136
Jianzhao Wang
Affiliation:
Polymer Program at the Institute of Materials Science, U-3136 & Department of Chemistry, University of Connecticut, Storrs, CT 06269–3136
Kenneth E. Gonsalves
Affiliation:
Polymer Program at the Institute of Materials Science, U-3136 & Department of Chemistry, University of Connecticut, Storrs, CT 06269–3136
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Abstract

Polyhedral oligosilsesquioxane methacrylate (POSSMA)/methyl methacrylate(MMA)/tert-butyl methacrylate(TBMA)/tert-butyl acrylate(TBA) copolymers were synthesized by solution polymerization. Their preliminary lithography-related properties were studied. It is shown that the mass ratio of MMA/POSSMA=85.8/14.2 leads to an X-ray resist with a high contrast of 23.5 without sacrificing the sensitivity(1350 mJ/cm2) which remains comparable to that of standard PMMA. By careful manipulation of components and compositions, this generic type of polymer could potentially be utilized as a DUV or e-beam resist as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 584 , 1999 , 121
Copyright
Copyright © Materials Research Society 2000

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