Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-29T07:35:02.717Z Has data issue: false hasContentIssue false

Polyfluorenes as Organic Semiconductors for Polymeric Field Effect Transistors

Published online by Cambridge University Press:  15 February 2011

David J. Brennan
Affiliation:
The Dow Chemical Company, Advanced Electronic Materials, Midland, Michigan, USA, 48674.
Paul H. Townsend
Affiliation:
The Dow Chemical Company, Advanced Electronic Materials, Midland, Michigan, USA, 48674.
Dean M. Welsh
Affiliation:
The Dow Chemical Company, Advanced Electronic Materials, Midland, Michigan, USA, 48674.
Mitchell G. Dibbs
Affiliation:
The Dow Chemical Company, Advanced Electronic Materials, Midland, Michigan, USA, 48674.
Jeff M. Shaw
Affiliation:
The Dow Chemical Company, Advanced Electronic Materials, Midland, Michigan, USA, 48674.
Jessica L. Miklovich
Affiliation:
The Dow Chemical Company, Advanced Electronic Materials, Midland, Michigan, USA, 48674.
Robyn B. Boeke
Affiliation:
The Dow Chemical Company, Advanced Electronic Materials, Midland, Michigan, USA, 48674.
Get access

Extract

Polyfluorenes are a class of polyaromatic macromolecules that are characterized by an alternating backbone structure that consists of a 9,9-dialkylfluorene unit in combination with another aromatic group. The nature of this aromatic unit plays a key role in the electronic properties of the polymers. For example, polyfluorenes which combine chromophoric and charge transporting aromatic units have received a great deal of attention over the last several years as the emissive layer in polymeric light emitting diodes [LUMATION* Light-Emitting Polymers (LEPs)]. More recently, polyfluorenes have also been designed to perform as the organic semiconducting layer in polymeric field effect transistors (PFETs). This effort has led to a class of polymeric semiconductors with an excellent combination of charge mobility, environmental stability, and processability. One such polymer is the polyfluorene based on an alternating backbone of 9,9-dioctylfluorene and 2,2'-bithiophene units. This material has been shown to have charge mobilities as high as 0.02 cm2/V-s with current on/off ratios of up to 106. The poly(fluorene-bithiophene) is more resistant to doping by atmospheric oxygen than other polymeric semiconductors such as poly(3-hexylthiophene). Inks based on solutions of poly(fluorene-bithiophene) in xylene, mesitylene, and other solvents have also been prepared. The paper will focus on the recent advances in the synthesis, fabrication, and electrical characterization of poly(fluorene-bithiophene). *Trademark of The Dow Chemical Company

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Bernius, M. T., Inbasekaran, M., O'Brien, J., Wu, W., Adv. Mater. 12, 1737 (2000).Google Scholar
2. Sirringhaus, H., Kawase, T., Friend, R. H., Shimoda, T., Inbasekaran, M., Wu, W., Woo, E. P., Science, 290, 2123 (2000).Google Scholar
3. Bernius, M. T. and Woo, E. P., U.S. Patent No. 6 204 515 B1 (20 March 2001).Google Scholar
4. Townsend, P. H., Dibbs, M., Brennan, D., Welsh, D., Shaw, J.Polymeric Semiconductor Development for Thin Film Transistors,” Proceedings of the International PolyScene-Workshop on Polymer Electronics, Munich, Germany, November, 2002, p. 9.Google Scholar
5. Inbasekaran, M., Wu, W., and Woo, E. P., U.S. Patent No. 5 777 070 (7 July 1998).Google Scholar
6. Sze, S. M., Physics of Semiconductor Devices, Wiley, New York, 1981.Google Scholar
7. Weimer, P. W., “Thin Film Active Devices,” Handbook of Thin Film Technology, Maissel, L. I. and Glang, R., Eds., McGraw-Hill, New York 1970, Chapter 20, p. 5.Google Scholar