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Polycrystalline Germanium and Silicon-Germanium Alloys on Plastic for Realization of Thin-Film Transistors

Published online by Cambridge University Press:  17 March 2011

B. Hekmatshoar ,
D. Shahrjerdi ,
S. Mohajerzadeh ,
A. Khakifirooz ,
M. Robertson  and
E. Asl
B. Hekmatshoar
Affiliation:
Soliemani Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran, +98-21 801 1235, e-mail: [email protected]
D. Shahrjerdi
Affiliation:
Soliemani Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran, +98-21 801 1235, e-mail: [email protected]
S. Mohajerzadeh
Affiliation:
Soliemani Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran, +98-21 801 1235, e-mail: [email protected]
A. Khakifirooz
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Boston, Massachusetts
M. Robertson
Affiliation:
Department of Physics, Acadia University, Wolfville, Nova Scotia, Canada
E. Asl
Affiliation:
Soliemani Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran, +98-21 801 1235, e-mail: [email protected]
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Abstract

Device-quality polycrystalline Ge layers have been grown on flexible poly-ethylene terephthalate (PET) substrates by means of stress-assisted Cu-induced crystallization at temperatures as low as 130°C and employed for fabrication of depletion-mode poly-Ge thin-film transistors (TFTs). These TFTs show an ON/OFF ratio of 104 and an effective hole mobility of 110 cm2/Vs. The stress-assisted crystallization technique has been extended to crystallize SiGe alloys at low temperatures for possible fabrication of poly-SiGe TFTs on plastic. As a result, poly-Ge seeded poly-crystalline SiGe layers with 40% Si content are grown at a low annealing temperature of 180°C in the presence of 0.05% equivalent compressive strain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 814: Symposium I – Flexible Electronics 2004-Materials and Device Technology , 2004 , I6.2
Copyright
Copyright © Materials Research Society 2004

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