Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-10T03:37:15.395Z Has data issue: false hasContentIssue false

Poly-crystalline Ge thin films prepared by RF sputtering method for thermo photo voltaic application

Published online by Cambridge University Press:  01 February 2011

Daisuke Hoshi
Affiliation:
Department of Electric & Electronic Engineering, Tokai University 1117 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
Isao Nakamura
Affiliation:
Department of Electric & Electronic Engineering, Tokai University 1117 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
Masao Isomura
Affiliation:
Department of Electric & Electronic Engineering, Tokai University 1117 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
Get access

Abstract

The poly crystalline Ge films were prepared by the RF sputtering method with Ar and Ar-H2 mixture gases. The crystallization temperature increases from 400 °C to 500 °C due to the H2 introduction into the sputtering gases. On the other hand, the H2 introduction decreases the absorption coefficients in the long wavelength region corresponding to lower energy values than the energy gap of Ge, although much higher absorption coefficients are observed in the case of the Ar sputtering. Probably, the gap state density decreases due to the hydrogen termination of dangling-bonds in the grain-boundaries. The (220) preferential orientation is stressed and the highest Hall mobility is obtained with 75% of the gas flow ratio [Ar/ (Ar+H2)]. The preferential growth probably causes higher quality Ge films.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Baldasaro, P. F, Raynolds, J. E., Charache, G.W., DePoy, D. M., Ballinger, C. T. and Donovan, T., J.Appl.Phys. Vol.89; 2001; pp33193327 10.1063/1.1344580Google Scholar
[2] Bett, A.W., Keser, S., Stollwerck, G., Sulima, O.V. and Wetting, W. “GaSb-based (thermo) photovoltaic cells with Zn diffused emitters” Proc. IEEE 25th PVSC; 1996; pp133136 10.1109/PVSC.1996.563965Google Scholar
[3] Wojtczuk, S., Colter, P., Charache, G. and Campbell, B., Proc. IEEE 25th PVSC; 1996; pp7780 Google Scholar
[4] Hishikawa, Y., Nakamura, N. and Tsuda, S., Proc. Jpn. J. Appl. Phys. Vol.30; 1991; pp10081014 10.1143/JJAP.30.1008Google Scholar
[5] D, Pallik. E.; Hand book “Optical Constants of Solid”; 1991 (New York:Academic); p321 Google Scholar