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Polycrystalline Diamond Film Resistors

Published online by Cambridge University Press:  25 February 2011

L. M. Edwards  and
J. L. Davidson
L. M. Edwards
Affiliation:
Department of Electrical Engineering, Vanderbilt University, Nashville, TN
J. L. Davidson
Affiliation:
Department of Electrical Engineering, Vanderbilt University, Nashville, TN
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Abstract

The technology to fabricate polycrystalline diamond film resistors has been initiated using modified thick film patterning techniques and in situ solid source doping.

Doping of polycrystalline diamond films in microwave plasma CVD systems has been achieved historically through use of diborane gas, which may contaminate the deposition system causing all diamond films thereafter to be doped p-type. We have attempted noncontaminating in situ doping utilizing two solid source dopants, and have met with preliminary success.

The more effective source (B2O3) produces a fairly even dopant concentration across the substrate, with sheet resistances ranging from 800 ohms per square to 4500 ohms per square. The other source (BN) showed significant doping in a narrow band surrounding the source, but the doping concentration decreased rapidly with distance from the source. Films grown afterwards with no doping were evaluated through resistance measurements; no evidence of doping contamination was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 165
Copyright
Copyright © Materials Research Society 1992

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References

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