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Polycrystalline Communication Links: Microelectronic Chip Interconnects

Published online by Cambridge University Press:  15 February 2011

Timothy D. Sullivan
Timothy D. Sullivan*
Affiliation:
IBM Microelectronics, 1000 River St., Essex Junction, VT 05452
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Abstract

All microelectronic chip interconnects are composed of polycrystalline films with properties that vary discretely with grain orientation. Techniques for dealing with this variation are developing as diminishing dimensions accentuate the effects of grain orientation. Variations in metallization microstructure affect mass transport and median failure time for metallization wearout mechanisms. Stability of adhesion layers, barrier layers and redundant conduction layers is influenced by the microstructure of the films in contact with each other. Intermetallic reactions, which are of no concern with single-level metallization, can become significant for multi level metallizations. Ti/AI systems provide typical examples of these trends.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 343: Symposium H – Polycrystalline Thin Films - Structure, Texture, Properties and Applications , 1994 , 629
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Kwok, T., in Proc. of 1st Int’l ULSI Science and Technology Symposium, ECS. ed., 593 (1987).Google Scholar
2. Kisbron, E., Appl. Phys. Lett.,36. 968 (1980).CrossRefGoogle Scholar
3. Cho, J. and Thompson, C. V., Appl. Phys. Lett., 54, 2577 (1989).Google Scholar
4. Licata, T. J., et al., in Mat. Res. Soc. Symp. Proc. Vol. 309, MRS. ed., 87 (1993).Google Scholar
5. See, for example, Walton, D, T., Frost, H. J., and Thompson, C. V., Appl Phys. Lett., 61, 40 (1992).CrossRefGoogle Scholar
6. Hinode, K., et al., J. Vac. Sci. Technol. B 5, 518 (1987).Google Scholar
7. Yue, J. T., Funsten, W. P., Taylor, H. V., in Reliability Physics 1985 Annual Proceedings, IEEE, NY, (1985), p.126.Google Scholar
8. Hinode, K., et al., J. Vac. Sci. Technol. B 8, 495 (1990).CrossRefGoogle Scholar
9. Krafcsik, I., et al., Appl. Phys. Lett., 43, 1015 (1983).Google Scholar
10. Geffken, R. M., Ryan, J. G., and Slusser, G. J., IBM J. Res. Develop., 31, 611 (1987).Google Scholar