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Polar-Twinned Defects in LiGaO2 Substrates Lattice Matched with GaN

Published online by Cambridge University Press:  10 February 2011

Takao Ishii ,
Yasuo Tazoh  and
Shintaro Miyazawa
Takao Ishii
Affiliation:
NTT System Electronics Laboratories, 3–1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243–01, Japan
Yasuo Tazoh
Affiliation:
NTT System Electronics Laboratories, 3–1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243–01, Japan
Shintaro Miyazawa
Affiliation:
NTT System Electronics Laboratories, 3–1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243–01, Japan
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Abstract

We investigated the Czochralski growth of LiGaO2 single crystal for use as a substrates for the epitaxial growth of hexagonal GaN. Crossed lines were observed in mechano-chemically polished {001} wafers sliced from a (001) axis boule. Chemical etching revealed that there exists a difference in chemical stability between two domains separated by a crossed line. Since LiGaO2 single crystal is polar along the c-axis, the formation of multi-domain structure is due to the polarity inversion of the c-axis, that is, polar twinned defects. We found that the GaN thin film on the (001) substrate with a multi-domain structure peeled off and that this is closely related with multi-polarity of substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 155
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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