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Polarized Raman Spectra of Carbon Nanotubes

Published online by Cambridge University Press:  15 March 2011

Ado Jorio ,
Sandra D.M Brown ,
Gene Dresselhaus ,
Mildred S. Dresselhaus ,
Marcos A. Pimentap ,
Riichiro Saito ,
Apparao M. Rao  and
Katrin Kneipp
Ado Jorio
Affiliation:
Massach usetts Institute of Tec hnologyCambridge, A 02139-4307
Sandra D.M Brown
Affiliation:
Massach usetts Institute of Tec hnologyCambridge, A 02139-4307
Gene Dresselhaus
Affiliation:
Massach usetts Institute of Tec hnologyCambridge, A 02139-4307
Mildred S. Dresselhaus
Affiliation:
Massach usetts Institute of Tec hnologyCambridge, A 02139-4307
Marcos A. Pimentap
Affiliation:
Univ. F ederal de inas Gerais, Belo Horizonte, MG 30123-970, Brazil
Riichiro Saito
Affiliation:
Univ. of Electro-Communications, Tokyo, 182-8585, Japan
Apparao M. Rao
Affiliation:
Clemson University, Clemson, SC 29634-0978
Katrin Kneipp
Affiliation:
Technical University of Berlin, Berlin, 10623, Germany
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Abstract

P olarizedresonant Raman spectra for the G-band were obtained from a rope of aligned semiconducting SWNTs and from nonaligned semiconducting and metallic SWNTs. Based on group theory analysis and related theoretical predictions, we assign the symmetry for the modes in the G-band of both metallic and semiconducting SWNTs. he frequency shifts of the tangential G modes from the 2D graphite-like E2g2 frequency are discussed in terms of the nanotube geometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 633: Symposium A – Nanotubes and Related Materials , 2000 , A6.5
Copyright
Copyright © Materials Research Society 2001

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References

[1] Dresselhaus, M. S. and Eklund, P. C., Advances in Physics 49, 705–814 (2000), and references therein.Google Scholar
[2] Kahn, D. and Lu, J. P., Phys. Rev. B 60, 6535 (1999).Google Scholar
[3] Saito, R., Jorio, A., Dresselhaus, G., and Dresselhaus, M. S.. In the 25th International Conference on The Physics of Semiconductors, Osaka, edited by Ando, T., 2000.Google Scholar
[4] Saito, R., Jorio, A., Hafner, J., Lieber, C. M., Hunter, M., McClure, T., Dresselhaus, G., and Dresselhaus, M. S., Phys. Rev. B (2001). BW7209 submitted: 9/11/00.Google Scholar
[5] Jorio, A., Dresselhaus, G., Dresselhaus, M. S., Souza, M., Dantas, M. S. S., Pimenta, M. A., Rao, A. M., Saito, R., Liu, C., and Cheng, H. M., Phys. Rev. Lett. 85, 2617–2620 (2000).Google Scholar
[6] Saito, R., Takeya, T., Kimura, T., Dresselhaus, G., and Dresselhaus, M.S., Phys. Rev.B 57, 4145–4153 (1998).Google Scholar
[7] Ajiki, H. and Ando, T., Physica, B, Condensed Matter 201,349 (1994).Google Scholar
[8] Liu, C., Cong, H. T., Li, F., Tan, P. H., Cheng, H. M., Lu, K., and Zhou, B. L., Carbon 37,1865 (1999).Google Scholar
[9] Fantini, C., Pimenta, M. A., Dantas, M. S. S., Ugarte, D., Rao, A. M., Jorio, A., Dresselhaus, G., and Dresselhaus, M. S., Phys. Rev. B (2001). in preparation.Google Scholar
[10] Kasuya, A., Sasaki, Y., Saito, Y., Tohji, K., and Nishina, Y., Phys. Rev. Lett. 78, 4434 (1997).Google Scholar
[11] Brown, S. D. M., Jorio, A., Corio, P., Dresselhaus, M. S., Dresselhaus, G., Saito, R., and Kneipp, K., Phys. Rev. B page in press (2001).Google Scholar
[12] Duesberg, G. S., Loa, I., Burghard, M., Syassen, K., and Roth, S., Phys. Rev. Lett. 85,5436–5439 (2000).Google Scholar