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Polarization-dependent spectroscopy of the near-bandgap excitonic emission in free standing GaN

Published online by Cambridge University Press:  01 February 2011

P. P. Paskov ,
T. Paskova ,
P. O. Holtz  and
B. Monemar
P. P. Paskov
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
T. Paskova
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
P. O. Holtz
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
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Abstract

We report a comparative study of the exciton emission in free standing HVPE layer for all polarization configurations. A noticeable difference between the emission spectra polarized perpendicular and parallel to the c-axis of the crystal is observed. The spectra for E┴c and EIIc are found to be dominated by the emissions of the donor-bound exciton and exciton-polariton both arising from the A and B valence band, respectively, which clearly reveals the optical selection rules in wurtzite GaN. The temperature evolution of the emission spectra is also examined and the thermal redistribution of the excitons at different polarization is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y6.1
Copyright
Copyright © Materials Research Society 2004

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References

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