Hostname: page-component-848d4c4894-2xdlg Total loading time: 0 Render date: 2024-07-04T18:40:55.714Z Has data issue: false hasContentIssue false

A Polarization Study of Ordered GaInP2

Published online by Cambridge University Press:  10 February 2011

Yong Zhang
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, [email protected]
P. Ernst
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, [email protected]
F. A. J. M. Driessen
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, [email protected]
A. Mascarenhas
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, [email protected]
C. Geng
Affiliation:
4. Physikalisches Institut, Universtät Stuttgart, 70550 Stuttgart, Germany.
F. Scholz
Affiliation:
4. Physikalisches Institut, Universtät Stuttgart, 70550 Stuttgart, Germany.
H. Schweizer
Affiliation:
4. Physikalisches Institut, Universtät Stuttgart, 70550 Stuttgart, Germany.
Get access

Abstract

Optical polarization in ordered GaInP2 has been studied by low-temperature photoluminescence. By comparing our experimental results to the theoretical predictions, we show that to obtain quantitative information about ordering from the polarization of near-band-gap transitions, the effects of lattice mismatch, substrate misorientation, and excitonic transitions should be taken into account.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Zunger, A. and Mahajan, S., Atomic Ordering and Phase Separation in Epitaxial III-V Alloys, in Handbook on Semiconductors, 2nd ed., Vol.3, ch. 19, pp. 1399, edited by Mahajan, S. (Elsevier, Amsterdam, 1994).Google Scholar
2. Wei, S.-H and Zunger, A., Phys. Rev. B 49, 14337 (1994).Google Scholar
3. Horner, G. S., Mascarenhas, A., Alonso, R. G., Froyen, S., Bertness, K. A. and Olson, J. M., Phys. Rev. B 49, 1727 (1994).Google Scholar
4. Alonso, R. G., Mascarenhas, A., Horner, G. S., Bertness, K. A., Kurtz, S. R. and Olson, J. M., Phys. Rev. B 48, 11833 (1993).Google Scholar
5. Luo, J. S., Olson, J. M., Bertness, K. A., Raikh, M. E. and Tsiper, E. V., J. Vac. Sci. Technol. B 12, 2552 (1994).Google Scholar
6. Kanata, Takashi, Nishimoto, Masahiko, Nakayama, Hiroshi and Nishino, Taneo, Appl. Phys. Lett. 63, 512 (1993).Google Scholar
7. Kita, Takashi, Fujiwara, Akira, Nakayama, Hiroshi and Nishino, Taneo, Appl. Phys. Lett. 66, 1794 (1995).Google Scholar
8. Ernst, P., Geng, C., Scholz, F. and Schweizer, H., Phys. Stat. Sol. (b),1995 ( in press).Google Scholar
9. Jones, E. D., Follstaedt, D M., Lee, H., Nelson, J. S., Schneider, R. P. Jr., Alonso, R. G., Homer, G. S., Machol, J. and Mascarenhas, A., in Physics of Semiconductors --Proceedings of the 22nd International Conference (Vancouver, Canada, 1994), edited by Lockwood, D. J. (World Sciencetific, Singapore, 1995), pp. 293.Google Scholar
10. Bassani, F. and Parravicini, G. P., Electronic States and Optical Transitions in Solids (Pergamon, Oxford, 1975), p. 190.Google Scholar
11. Zhang, Yong and Mascarenhas, A., Phys. Rev. B 51, 13162 (1995).Google Scholar
12. Ernst, P., Geng, C., Scholz, F. and Schweizer, H., Zhang, Yong and Mascarenhas, A., Appl. Phys. Lett. 67, 2347 (1995)Google Scholar