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Point Defects Interaction with Extended Defects and Impurities and its Influences on the Si-SiO2 System Properties

Published online by Cambridge University Press:  01 February 2011

D. Kropman ,
U. Abru ,
T. Kärner ,
U. Ugaste ,
E. Mellikov ,
M. Kauk ,
I. Heinmaa  and
A. Samoson
D. Kropman
Affiliation:
Maritime Academy, Mustakivi 25,13912 Tallin, Estonia, [email protected]
U. Abru
Affiliation:
Tondi Electronics, Tallinn, Estonia
T. Kärner
Affiliation:
Departement of Physics, University of Tartu, Tartu, Estonia
U. Ugaste
Affiliation:
Departement of Natural Sciences, Tallinn University, Tallin, Estonia
E. Mellikov
Affiliation:
Technical University, Tallinn, Estonia
M. Kauk
Affiliation:
Technical University, Tallinn, Estonia
I. Heinmaa
Affiliation:
Institute of Chemical Physics and Biophysic, Tallinn, Estonia
A. Samoson
Affiliation:
Institute of Chemical Physics and Biophysic, Tallinn, Estonia
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Abstract

The type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation condition: tempertature, cooling rate, oxidation time, impurity content. The interaction between point defects with extended defects and impurities affect the Si-SiO2 interface properties. The influences of point defects may be diminished and the interface properties improved by an appropriate choice of oxidation conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E4.24
Copyright
Copyright © Materials Research Society 2005

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