Hostname: page-component-f554764f5-246sw Total loading time: 0 Render date: 2025-04-10T22:48:33.887Z Has data issue: false hasContentIssue false
  • English
  • Français

Point Defects, Dislocations in GaAs and Material Homogeneity

Published online by Cambridge University Press:  26 February 2011

J. C. Bourgoin ,
H. J. von Bardeleben ,
H. Lin  and
D. Stievenard
J. C. Bourgoin
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supérieure, C.N.R.S. °, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France
H. J. von Bardeleben
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supérieure, C.N.R.S. °, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France
H. Lin
Affiliation:
Department of Electronic Engineering, Ajou University, Suwon, 170, Korea
D. Stievenard
Affiliation:
Département de Physique des Solides, Institut Supérieur d'Éectronique du Nord, 41 boulevard Vauban, 59046 Lille Cedex, France
Get access

Abstract

Combined positron annihilation and differential thermal analysis have shown that, in bulk GaAs materials, dislocations are decorated with vacancy related defects which recombine with As interstitials originating from As clusters. The role of these dislocations, the role of As source of these clusters are described and the consequences on the material homogeneity discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 411
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1.Bourgoin, J.C., Bardeleben, H.J. von, Stiévenard, D. and Bonnet, M. in 14th Int. Symp. on GaAs and Related Compounds (Heraklion, Greece, 1987) (to be published).Google Scholar
2.Miyazawa, S., Ishii, Y., Ishida, S. and Naniski, Y., Appl. Phys. Lett. 43, 853 (1985).Google Scholar
3.Chin, A.K., Caruso, R., Young, M.S.S. and Neida, A.R. von, Appl. Phys. Lett. 45, 552 (1984).Google Scholar
4.Chin, A.K., Camlebel, I., Caruso, R., Young, M.S.S. and Neida, A.R. von, J. Appl. Phys. 57, 2203 (1985).Google Scholar
5.Wakefield, B., Leigh, P.A., Lyons, N.H. and Elliott, C.K., Appl. Phys. Lett. 45, 66 (1984).Google Scholar
6.Hovel, H.J. and Gindotti, D., IEEE Trans Electron Dev. ED32, 2331 (1985).Google Scholar
7.Fujimoto, I., Japan J. Appl. Phys. 23, L 287 (1984).Google Scholar
8.Stirland, D.J., Inst. Phys. Conf. Ser. 33a, 150 (1977).Google Scholar
9.Augustus, P.D. and Stirland, D.J., J. Microscopy 118, 111 (1980).Google Scholar
10.Cullis, A.G., Augustus, P.D. and Stirland, D.J., J. Appl. Phys. 51, 2556 (1980).Google Scholar
11.Marek, J., Elliott, A.G., Wilka, V. and Geiss, R., Appl. Phys. Lett. 49, 1732 (1986).Google Scholar
12.Heinke, W. and Queisser, H.J., Phys. Rev. Lett. 33, 1082 (1974).Google Scholar
13.Heinke, W., Inst. Phys. Conf. Set. 23, 380 (1975).Google Scholar
14.Miyazawa, S., Honda, T., Ishii, Y. and Ishida, S., Appl. Phys. Lett. 44, 410 (1984).Google Scholar
15.Dannefaer, S. and Kerr, D., J. Appl. Phys. 60, 591 (1986).Google Scholar
16.Bardeleben, H.J. von, Stiévenard, D., Bourgoin, J.C. and Huber, A., Appl. Phys. Lett. 47, 970 (1985).Google Scholar
17.Bourgoin, J.C., Bardeleben, H.J. von and Stiévenard, D., J. Appl. Phys. (to be published).Google Scholar
18.Bardeleben, H.J. von, Stiévenard, D., Deresmes, D., Huber, A. and Bourgoin, J.C., Phys. Rev. B 34, 7192 (1986).Google Scholar
19.Barett, D.L., McQuigan, S., Holgood, H.M., Elredge, G.W. and Thomas, R.M., J. Cryst. Growth 70, 179 (1984).Google Scholar
20.Delerue, C., Lannoo, M., Stiévenard, D., Bardeleben, H.J. von and Bourgoin, J.C. (unpublished).Google Scholar
21.Bardeleben, H.J. von, Bourgoin, J.C., Zelsmann, H.R. and Bonnet, M. in Proc. European Mat. Res. Soc. Symp. (Strasbourg 1987), (Les Editions de Physique, 1988).Google Scholar
22.Pistoulet, B., Girard, P. and Hamamdjian, G., J. Appl. Phys. 56, 2268 (1984).Google Scholar
23.Pistoulet, B., J. Appl. Phys. 56, 2275 (1984).Google Scholar
24.Look, D.C., Yu, P.W., Theis, W.M., Ford, W., Mathur, G., Sizerlove, J.R., Lee, D.H. and Li, S.S., Appl. Phys. Lett. 49, 1083 (1986).Google Scholar
25.Look, D.C., Theis, W.M., Yu, P.W., Sizerlove, J.R., Ford, W. and Mathar, G., J. Electron. Mat. 16, 63 (1987).Google Scholar