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Point Defect-Based Modeling of Transient Diffusion of Boron Implanted in Silicon Along Random and Channeling Directions

Published online by Cambridge University Press:  15 February 2011

H. U. Jäger
H. U. Jäger*
Affiliation:
Research Center Rossendorf Inc., Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, D-01314 Dresden, Germany.
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Abstract

A point defect-based model, which has been developed to describe diffusion and electrical activation of boron in crystalline silicon during post-implantation annealing, is used to simulate the anomalous diffusion of boron implanted into silicon along the random and [100] channeling directions. The model predictions are compared to data measured by Chu et al.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 389: Symposium R – Modedling and Simulation of Thin-Film Processing , 1995 , 71
Copyright
Copyright © Materials Research Society 1995

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References

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