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Point Defect Engineering Applied to Shallow Junction ULSI Processing

Published online by Cambridge University Press:  21 February 2011

George A. Rozgonyi  and
J. W. Honeycutt
George A. Rozgonyi
Affiliation:
North Carolina State University Department of Materials Science and Engineering Raleigh, NC 27695–7916
J. W. Honeycutt
Affiliation:
North Carolina State University Department of Materials Science and Engineering Raleigh, NC 27695–7916
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Abstract

We describe how a simple qualitative understanding of the interfacial reactions occurring during typical ULSI processes for junction formation, dopant activation, and contact silicidation can be used to eliminate end-of-range interstitial dislocation loops and beneficially impact the diffusion of dopants. Following a brief discussion of the well-documented effects of oxidation and nitridation on extended defects and dopant diffusion, conditions for elimination of implantation-induced defects are specified. Cross-section and plan-view TEM along with angle lapping and chemical etching of implanted and diffused junctions are presented to illustrate the application of point defect engineering to process technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 3
Copyright
Copyright © Materials Research Society 1989

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