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Point Defect Characterization of Zn- and Cd-Based Semiconductors Using Positron Annihilation Techniques

Published online by Cambridge University Press:  10 February 2011

G. Tessaro  and
P. Mascher
G. Tessaro
Affiliation:
Department of Engineering Physics, McMaster University, 1280 Main St. West, L8S 4L7, Hamilton, Ontario
P. Mascher
Affiliation:
Department of Engineering Physics, McMaster University, 1280 Main St. West, L8S 4L7, Hamilton, Ontario
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Abstract

A study of point defects in II-VI compound semiconductors was undertaken and has revealed that open volume defects are present in a wide variety of these samples. Zn-based binary compounds contain primarily neutral divacancy defects in concentrations in the mid 1016 cm−3. CdTe samples contain neutral monovacancy sized defect complexes in the high 1016 cm−3 range. When a small fraction of Zn or Se is alloyed into CdTe the defect profile changes dramatically to one dominated by divacancy sized defects at roughly half the original concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 583
Copyright
Copyright © Materials Research Society 1998

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