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Point Defect Changes in CuGaSe2 Induced by Gas Annealing

Published online by Cambridge University Press:  01 February 2011

Akimasa Yamada ,
Akihiko Nishio ,
Paul. Fons ,
Hajime Shibata ,
Koji Matsubara ,
Shigeru Niki  and
Hisayuki Nakanishi
Akimasa Yamada
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan
Akihiko Nishio
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan
Paul. Fons
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan
Hajime Shibata
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan
Koji Matsubara
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan
Shigeru Niki
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan
Hisayuki Nakanishi
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan
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Abstract

Epitaxial CuGaSe2 films were grown on GaAs substrates under Cu-excess conditions to obtain stoichiometric compositions. The films were annealed in Ar, Sex or O2 ambients with or without a Cu or Cu-Se cap layer with the intention of changing the intrinsic defect concentrations. Samples were evaluated using low-temperature photoluminescence (PL) measurements. Annealing of the samples dramatically changed the PL spectra indicating that not only interdiffusion had occurred, but defect species and populations were changed. Comprehensive consideration of the changes led to the conclusion that the emissions at 1.62 eV, 1.66 eV and in the range from 1.2 to 1.4 eV are related to specific defects of Se vacancies, Cu vacancy-Se vacancy complexes and interstitial Cu, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B5.17
Copyright
Copyright © Materials Research Society 2003

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