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Point and planar defect formation in SiC during PVT growth

Published online by Cambridge University Press:  21 March 2011

Yuri I. Khlebnikov ,
Roman V. Drachev ,
Curtis A. Rhodes ,
Dmitry I. Cherednichenko ,
Igor I. Khlebnikov  and
Tangali S. Sudarshan
Yuri I. Khlebnikov
Affiliation:
Band Gap Technologies Inc. Columbia, SC 29208, USA.
Roman V. Drachev
Affiliation:
Electrical Engineering Department, University of South Carolina, Carolina, SC 29208, USA
Curtis A. Rhodes
Affiliation:
Mechanical Engineering Department, University of South Carolina, Carolina, SC 29208, USA.
Dmitry I. Cherednichenko
Affiliation:
Electrical Engineering Department, University of South Carolina, Carolina, SC 29208, USA
Igor I. Khlebnikov
Affiliation:
Electrical Engineering Department, University of South Carolina, Carolina, SC 29208, USA
Tangali S. Sudarshan
Affiliation:
Electrical Engineering Department, University of South Carolina, Carolina, SC 29208, USA
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Abstract

The spontaneous nucleation of “negative” crystals from the solute of vacancies in SiC does not appear to be dominant due to the low super-saturation of vacancies. However, clustering of the vacancies is possible due to the energy gain in the system caused by coalescence of any two vacancies. The major reasons for point and planar defect formation in SiC are the liquid phase of free silicon and non-stoichiometry of the vapor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.1
Copyright
Copyright © Materials Research Society 2001

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References

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