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Pld Epitaxial Tin Contacts To 6H-Sic And Gan
Published online by Cambridge University Press: 10 February 2011
Abstract
We have investigated the influence of TiN growth temperature on the contact resistance in TiN/SiC and TiN/GaN heterostructures. Epitaxial TiN layers grown at temperatures above 600°C formed low resistance contacts to n-type 6H-SiC and GaN of 1.1× 10−3 Ωcm2 and 7.9 ×10−5 Ωcm2, respectively. Structural and electrical characterization of TiN thin films is discussed.
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- Copyright © Materials Research Society 1998