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Plastic Deformation in Thin Copper Films Determined by X-Ray Micro-Tensile Tests

Published online by Cambridge University Press:  15 February 2011

A. Kretschmann ,
W.-M. Kuschke ,
S. P. Baker  and
E. Arzt
A. Kretschmann
Affiliation:
Max-Planck-Institut für Metal forschung, Seestr. 92, 70174 Stuttgart, Germany
W.-M. Kuschke
Affiliation:
Max-Planck-Institut für Metal forschung, Seestr. 92, 70174 Stuttgart, Germany
S. P. Baker
Affiliation:
Max-Planck-Institut für Metal forschung, Seestr. 92, 70174 Stuttgart, Germany
E. Arzt
Affiliation:
Max-Planck-Institut für Metal forschung, Seestr. 92, 70174 Stuttgart, Germany
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Abstract

Plastic deformation in thin copper films has been studied at room temperature. Copper films having a thickness of 1 μm were made by sputtering onto nickel substrates with a Si3N4 underlayer and with or without a Si3N4 caplayer. Deformation experiments were conducted using a special micro-tensile tester built into a θ–θ diffractometer. The problems normally associated with tension tests of free-standing films were avoided by deforming the substrate and film together. In-situ x-ray measurements of the lattice spacings and lattice spacing distributions were used to determine both elastic and plastic strains. The effects of caplayer and annealing temperature on mechanical properties are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 436: Symposium CC – Thin Films Stresses and Mechanical Properties VI , 1996 , 59
Copyright
Copyright © Materials Research Society 1997

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References

1. Keller, R.-M., Kuschke, W.-M., Kretschmann, A., Bader, S., Vinci, R.P. and Arzt, E. in Materials Reliability in Microelectronics V, edited by Oates, A. S., Filter, W. F., Rosenberg, R., Gadepally, K., Greer, L. (Mater. Res. Soc. Symp. Proc. 391, Pittsburgh, PA 1995), p. 309–314.Google Scholar
2. Marion, R.H. and Cohen, J.B. in Advances in X-Ray Analysis, edited by McMurdie, H. F. et.al. (Vol. 20, Plenum Press, New York, 1977), p. 355–367 Google Scholar
3. Perry, K., Noyan, I.C., Rudnik, P.J. and Cohen, J.B. in Advances in X-Ray Analysis edited by Cohen, J.B. et. al. (Vol. 27, Plenum Press, New York (1984), p. 159–170.Google Scholar
4. Perry, A. J. and Chollet, L., J. Vac. Sci. Technol. A4, p. 2801–2808 (1986.Google Scholar
5. Sheikh, G. and Noyan, I.C. in Advances in X-Ray Analysis, edited by Barrett, C. S. (Vol. 33, Plenum Press, New York (1990), p. 161–169.Google Scholar
6. Behnken, H. and Hauk, V., Thin Solid Films 193/194, p. 333–341 (1990).Google Scholar
7. Noyan, I.C. and Sheikh, G., IBM Research Report 16927, p. 1–11 (1991).Google Scholar
8. Schadler, L.S. and Noyan, I.C. in Thin Films: Stresses and Mechanical Properties III, edited by Nix, W.D., Bravman, J.C., Arzt, E. and Freund, L.B. (Mater. Res. Soc. Symp. Proc. 239, Pittsburgh, PA 1992), p. 151–156.Google Scholar
9. Noyan, I.C. and Sheikh, G. in Thin Films: Stresses and Mechanical Properties IV, edited by Townsend, P. H., Weihs, T.P., Sanchez, J.E. , Jr and P., Børgesen (Mater. Res. Soc. Symp. Proc. 308, Pittsburgh, PA 1993), p. 3–13.Google Scholar
10. Tracy, D.P. and Knorr, D.B., J. Electron. Mater. 22, p. 611–616 (1993).Google Scholar