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Plasma-Initiated Laser Deposition of Polycrystalline and Monocrystalline Silicon Films*

Published online by Cambridge University Press:  21 February 2011

J. M. Gee ,
P. J. Hargis Jr. ,
M. J. Carr ,
D. R. Tallant  and
R. W. Light
J. M. Gee
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
P. J. Hargis Jr.
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
M. J. Carr
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
D. R. Tallant
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
R. W. Light
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

In this paper we report a new method of silicon deposition using the interaction between the radiation from a pulsed-ultraviolet excimer laser and the plasma species produced in a glow discharge in silane (SiH4). Examination of the deposited film by laser Raman spectroscopy and by transmission electron microscopy revealed that the morphology ranged from polycrystalline silicon at laser fluences of 0.13–0.17 J/cm2 to epitaxial silicon at fluences of 0.4–0.6 J/cm2 . Growth rates of 100 nm/min for polycrystalline silicon and 30 nm/min for monocrystalline silicon were achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 15
Copyright
Copyright © Materials Research Society 1984

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Footnotes

*

This work performed at Sandia National Laboratories supported by the U. S. Department of Energy under contract number DE-AC04-76DP00789.

References

REFERENCES

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