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Plasma-Enhanced Chemical Vapor Deposition of ZrF4-Based Fluoride Glass Film and Oxygen Doping Effects on Glass Forming Ability

Published online by Cambridge University Press:  15 February 2011

K. Fujiura ,
Y. Nishida ,
K. Kobayashi  and
S. Takahashi
K. Fujiura
Affiliation:
NTTOpto-Electronics Laboratories, Tokai, Ibaraki, 319–11 JAPAN
Y. Nishida
Affiliation:
NTTOpto-Electronics Laboratories, Tokai, Ibaraki, 319–11 JAPAN
K. Kobayashi
Affiliation:
NTTOpto-Electronics Laboratories, Tokai, Ibaraki, 319–11 JAPAN
S. Takahashi
Affiliation:
NTTOpto-Electronics Laboratories, Tokai, Ibaraki, 319–11 JAPAN
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Abstract

ZrF4-based binary glass film is synthesized for the first time by plasma-enhanced chemical vapor deposition (PCVD). The optical transmission spectrum is measured and the effects of oxygen doping on the glass forming ability are clarified. No absorption band caused by OH or other impurities is observed in the near IR region. Weak absorption bands attributed to defect centers are observed in the UV to visible region. The glass forming region in the ZrF4-BaF2 system is significantly improved by oxygen doping. Oxygen ions are distributed homogeneously in the fluoride glass film by PCVD and improve its stability against crystallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 244: Symposium J – Optical Waveguide Materials , 1991 , 121
Copyright
Copyright © Materials Research Society 1992

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References

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