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Plasma Surface Interaction During the Growth of Semiconductor Thin Films Studied byin Situ Infrared Ellipsometry

Published online by Cambridge University Press:  21 February 2011

N. Blayo  and
B. Drevillon
N. Blayo
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UPR 258 du CNRS) Ecole Polytechnique, 91128 Palaiseau, France.
B. Drevillon
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UPR 258 du CNRS) Ecole Polytechnique, 91128 Palaiseau, France.
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Abstract

The early stages of the growth of plasma deposited amorphous silicon (a-Si:H) and microcrystalline silicon (μc-Si) on glass substrates are investigated by in situ infrared phase modulated ellipsometry (IRPME) in the silicon-hydrogen stretching mode region. μc-Si are prepared by alternating SiH4 and H2 plasmas. New insights on the plasma-surface interactions during the growth of these films are given. During the deposition of the first 20 Å of a-Si:H, the hydrogen is incorporated as SiH2. During the further growth of a-Si:H the SiH2 bonds are located at the film surface inside a very thin hydrogen rich overlayer. During the deposition of the first 10–20 Å of μc-Si, the SiH2 bonds are predominantly removed by the H2 plasma, the material being amorphous. After this selective removal of the SiH2 groups, a transition from amorphous to microcrystalline growm is observed. A systematic hydrogen etching during the further growth of μc-Si is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 631
Copyright
Copyright © Materials Research Society 1992

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References

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