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Plasma Processing Reactor with Surface Magnetic Field Confinement

Published online by Cambridge University Press:  21 February 2011

T. D. Mantei ,
T. E. Wicker  and
D. Kazmierzak
T. D. Mantei
Affiliation:
Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0030
T. E. Wicker
Affiliation:
Tegal Corporation, 11 Digital Drive, Novato, California 94947
D. Kazmierzak
Affiliation:
Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0030
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Abstract

A plasma reactor has been developed for dry reactive plasma etching and thin semiconductor film deposition. The system combines a multipolar magnetic field layer [1] for charged-particle confinement, and independently controlled substrate biasing. A large volume of dense (1011 cm-3), uniform, quiescent plasma is produced at low working pressure ( 1 mTorr). Anisotropic profiles can be etched into silicon in an SF6-O2 plasma with vertical etch rates ∼l um/min. In a pure silane plasma, good quality polycrystalline silicon films can be deposited at rates 1 to 10 Å/sec., at substrate temperatures 50° to 300° C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 409
Copyright
Copyright © Materials Research Society 1985

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References

1. Limpaecher, R. and MacKenzie, K.R., Rev. Sci. Instrum. 44, 726 (1973).Google Scholar
2. Mantei, T.D. and Wicker, T., Appl. Phys. Lett. 43, 84 (1983).CrossRefGoogle Scholar
3. Drevillon, B., Huc, J., Lloret, A., Perrin, J., de Rosny, G., and Schmitt, J.P.M., Appl. Phys. Lett. 37, 646 (1980).CrossRefGoogle Scholar
4. Leung, K.N., Samec, T.K., and Lamm, A., Phys. Lett. 51A, 490 (1975).Google Scholar
5. Mantei, T.D., J. Electrochem. Soc. 130, 1959 (1983).CrossRefGoogle Scholar
6. Laframboise, J.G., Univ. of Toronto, Inst. Aerospace Studies Rep. No. 100 (1966).Google Scholar
7. Wicker, T.E. and Mantei, T.D., to be published in J. Appl. Phys.Google Scholar