Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-25T18:42:24.076Z Has data issue: false hasContentIssue false
  • English
  • Français

Plasma Hydrogenation – A New Method of Reducing the k Value of the Low k Polyimide Film

Published online by Cambridge University Press:  01 February 2011

Yue Kuo ,
Taewoo Chung  and
Helinda Nominanda
Yue Kuo
Affiliation:
Thin Film Microelectronics Research Laboratory, Department of Chemical Engineering, Texas A&M University, College Station, TX 77843-3122
Taewoo Chung
Affiliation:
Thin Film Microelectronics Research Laboratory, Department of Chemical Engineering, Texas A&M University, College Station, TX 77843-3122
Helinda Nominanda
Affiliation:
Thin Film Microelectronics Research Laboratory, Department of Chemical Engineering, Texas A&M University, College Station, TX 77843-3122
Get access

Abstract

A new method of lowering the dielectric constant (k) of a low k polyimide thin film by plasma hydrogenation has been studied. The influence of the plasma process to the material properties, such as the composition, binding energies, and bond types, and dielectric characters, such as k and leakage current, were investigated. The result showed that after hydrogenation, the film's chemical and physical structures were changed. The film's k value could be lowered to 2.3 or less and the leakage current was only slightly increased. The mechanism of the process, which is responsible for the film's material and electrical property changes, is discussed. This is an effective method in preparing dielectrics with very low k values, which is critical for the success of the multilevel interconnection structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E8.16
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Case, C., “The Challenges in the ITRS Interconnect Roadmap,” Solid State International, January 2002.Google Scholar
2. Kuo, Y. and Lee, S., “A Novel Plasma-Based Copper Dry Etching Method,” Jpn. J. Appl. Phys. 39(3AB), L188–L190, 2000.Google Scholar
3. Kuo, Y. and Lee, S., “Room-Temperature Copper Etching Based on a Plasma-Copper Reaction,” Appl. Phys. Lett., 78(7), 1002–1004, 2001.Google Scholar
4. Lee, S. and Kuo, Y., “A New Hydrogen Chloride Plasma-Based Copper Etching Process,” Jpn. J. Appl. Phys., 41(12), 7345–7352, 2002.Google Scholar
5. Maier, G., Prog. Polym. Sci., 26, 3 (2001).Google Scholar
6. Ku, C. C., Liepins, R., Electrical Properties of Polymers Chemical Principles, p. 20, Hanser/Gardner Publications, Inc., (1987).Google Scholar
7. Golden, J. H., Hawker, C. J., Ho, P. S., Semiconductor International, 24 (5), 79 (2001).Google Scholar
8. Kuo, Y., “Plasma Swelling of Photoresist,” Jpn. J. Appl. Phys., 32(1), 1AB, L126–L128, 1993.Google Scholar
9. Chung, T., MS Thesis, Chemical Engineering Department, Texas A&M University, 2002.Google Scholar