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Plasma Etching and Surface Analysis of a-SiC:H Films Deposited by Low Temperature Plasma Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  22 February 2011

J. H. Thomas III ,
M. J. Loboda  and
J. A. Seifferly
J. H. Thomas III
Affiliation:
David Sarnoff Research Center, Princeton NJ 08543
M. J. Loboda
Affiliation:
Dow Corning Corp. Midland MI 48686
J. A. Seifferly
Affiliation:
Dow Corning Corp. Midland MI 48686
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Abstract

Organosilicon precursors were used to deposit thin films of highly stable amorphous hydrogenated silicon carbide at low temperatures by plasma enhanced chemical vapor deposition. X-ray photoemission and Auger electron spectroscopy were employed to characterize the surface chemistry of air exposed and plasma etched films. Auger analysis of the as-deposited material shows its composition to be constant throughout its depth. RF plasma etching was performed in CF4/O2 and SF6/O2 gas mixtures. Etch rates in these atmospheres are similar to those reported in the literature. After plasma etching, the surface was converted to a highly fluorinated state. In addition to the expected SiC bond, Si-OF bonds were found after plasma etching. Fluorocarbon residue was not produced in this process. Chlorine etching of this low temperature PECVD film is described and is shown to be compatible with standard integrated circuit manufacture processing as an hermetic-like sealant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 445
Copyright
Copyright © Materials Research Society 1994

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