Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-17T17:26:14.157Z Has data issue: false hasContentIssue false
  • English
  • Français

Plasma Enhanced Mocvd of BaTiO3 Films

Published online by Cambridge University Press:  25 February 2011

Peter C. Van Buskirk ,
Robin Gardiner ,
Peter S. Kirlin ,
Salora Krupanidhi  and
Steven Nutt
Peter S. Kirlin
Affiliation:
Advanced Technology Materials, 7 Commerce Dr., Danbury, CT. 06810
Salora Krupanidhi
Affiliation:
224 Materials Research Lab, Pennsylvania State University, University Park, PA 16802
Steven Nutt
Affiliation:
Division of Engineering, Box D, Brown University, Providence, RI 02912
Get access

Abstract

Bulk BaTiO3 has a large linear electro-optic coefficient and a very high dielectric constant. We report results obtained for two different MOCVD processes designed to deposit BaTiO3 films with properties suitable for nonlinear electro-optic or high charge storage applications. Epitaxial BaTiO3 films have been grown on NdGaO3 [100] substrates using a high temperature thermal process; the substrate temperature was 1000°C and the total pressure was 4 torr. Selected area electron diffraction (SAED) measurements indicate highly textured, single phase films on the NdGaO3 substrate which are predominantly [100] oriented. Fine grained polycrystalline films have been grown on Pt at 600°C by plasma-enhanced metalorganic chemical vapor deposition (PEMOCVD). Specular IR reflectance was used to determine the concentration of BaCO3 in the film, which was significantly reduced by the plasma. The polycrystalline films had dielectric constants as large as 300 and resistivities exceeding 5 x 108 Ω-cm at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 223
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Lines, M.E.; Glass, A.M.; Principles and applications of ferroelectrics and related materials, Claredon Press, Oxford (1970).Google Scholar
2This arises because, for an electric field aligned along the a or b crystal axes, these tensor elements represent maximum An 45' from the applied E-field and the poling (c-axis) direction. See, for example: Kaminov, I.P., Turner, E.H., Proc. IEEE, 54, 1374 (1966).Google Scholar
3 Tien, P.K.; Appl. Optics, 10, 2395 (1971).Google Scholar
4 Parker, L.H.; Tasch, A.F., IEEE Circuits and Devices Magazine, 17, Jan. 1990.Google Scholar
5 Arlt, G.; Hennings, D.; de With, G.; J. Appl. Phys., 58, 1619 (1985).Google Scholar
6 Uchino, K.; Sadanaga, E.; Hirose, T.; J Am. Ceram. Soc., 72, 1555 (1989).Google Scholar
7 Van Buskirk, P.C., Gardiner, R., Kirlin, P.S., MRS Proc., 202, 235 (1990).Google Scholar
8 Koren, G.; Appl. Phys. Lett., 54, 1054 (1989).Google Scholar
9 Sakuma, T; Yamamichi, S.; Matsubara, S.; Yamaguchi, H, Miyasaka, Y.; Appl. Phys. Lett., 57, 2431 (1990).Google Scholar
10The metal layer thicknesses were 1000Å. ONO stands for a SiO2 / Si3N4 / SiO2 trilayer that prevents diffusion of Si into the Ti layer.Google Scholar
11 Shakh, A.S.; Vest, R.W.; Vest, G.M.; IEEE Trans. Ferroelec. Freq. Control, 36, 407(1989).Google Scholar
12 Lee, C.H.; Park, S.J.; J. Mater. Sci., 1, 219 (1990).Google Scholar
13 Murty, H.S.; Subba, M.S; Kutty, R.T.N.; J. Inorg, Nucl. Chem,, 37, 1981 (1975)Google Scholar
14 Sugii, N., Saito, S., Imagawa, K., Kanehori, K., Takagi, K., J. J. Appl, Phvs., 30, L1118 (1991).Google Scholar
15An aluminum film was used as a reflectance standard; the data shown is accurate to within 2%.Google Scholar
16 Herzberg, G.; Infrared and Raman Spectra of Polyatomic Molecules, VanGoogle Scholar