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Plasma Deposition of Wide Gap, Highly Photoconductive a-Si:H Thin Films from Disilane-Helium Mixtures

Published online by Cambridge University Press:  21 February 2011

G. Rajeswaran ,
P. E. Vanier ,
R. R. Corderman  and
F. J. Kampas
G. Rajeswaran
Affiliation:
Division of Metallurgy and Materials Science Brookhaven National Laboratory, Upton, NY 11973.
P. E. Vanier
Affiliation:
Division of Metallurgy and Materials Science Brookhaven National Laboratory, Upton, NY 11973.
R. R. Corderman
Affiliation:
Division of Metallurgy and Materials Science Brookhaven National Laboratory, Upton, NY 11973.
F. J. Kampas
Affiliation:
Division of Metallurgy and Materials Science Brookhaven National Laboratory, Upton, NY 11973.
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Abstract

Wide gap (>1.9 eV), photoconductive, intrinsic amorphous silicon films were made in a UHV system from Si2H6 -He mixtures. The hydrogen concentrations, optical gaps and photoconductivities were measured. Unlike films made from SiH4, Si2H6-produced films exhibit excellent electronic properties even at low deposition temperatures. The ratio of AM1 photoconductivity to dark conductivity was as high as 107.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 393
Copyright
Copyright © Materials Research Society 1985

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