Hostname: page-component-5c6d5d7d68-qks25 Total loading time: 0 Render date: 2024-08-26T04:27:03.215Z Has data issue: false hasContentIssue false
  • English
  • Français

Plasma Deposition of a-Si:H

Published online by Cambridge University Press:  21 February 2011

John C. Knights
John C. Knights*
Affiliation:
Xerox Palo Alto Research Center, 33,33 Coyote Hill Road, Palo Alto, CA 94304
Get access

Abstract

There are four easily identified stages in the formation of a hydrogenated amorphous silicon film from an electrical discharge in silane. The first stage is the primary reaction between electrons and silane resulting in a mixture of ions and free radicals. The second stage is the transport of these species to the substrate surface accompanied in parallel by a multiplicity of secondary reactions e.g. ion-molecule, photon-molecule, etc. The third stage is the reaction or adsorption of these species with or onto the substrate surface and the fourth stage is the process by which these species or their reaction products incorporate into the growing film or are reemitted from the surface into the gas phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 371
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kampas, F. J., in “Preparation ”, ed. Pankove, J., Academic Press, New York (1984).Google Scholar
2. Taniguchi, M., Hirose, M., Hamasaki, T. and Osaka, Y., Appl. Phys. Lett. 37, 782 (1980).CrossRefGoogle Scholar
3. Hirose, M., Hamasaki, T., Mishima, Y., Kurata, H. and Osaka, Y., AlP Conference Proceedings 73, 10 (1981).Google Scholar
4. Dubois, J., Can. J. Phys. 46, 2485 (1968).CrossRefGoogle Scholar
5. O'Keefe, J. F. and Lampe, F. W., Appl. Phys. Lett. 42, 217 (1983).CrossRefGoogle Scholar
6. Knights, J. C., Schmitt, J. P. M., Perrin, J. and Guelachvili, G., J. Chem. Phys. 76, 3414 (1982).CrossRefGoogle Scholar
7. Perrin, J., doctoral thesis LPNHE/X11/83 at University of Paris VII (1983).Google Scholar
8. Turban, G., Catherine, Y. and Grolleau, B., Thin Solid Films 77, 287 (1981).CrossRefGoogle Scholar
9. Hailer, I. in Proceedings of the 6th International Symposium on Plasma Chemistry 1983 edited by Boulos, M. I. and Munz, R. J. (McGill University, Montreal, 1983) p. 826.Google Scholar
10. Matsuda, A., Kaga, T., Tanaka, H. and Tanaka, K., J. Non-Cryst. Sol. 59/60, 687 (1983).CrossRefGoogle Scholar
11. Longeway, P. A., Estes, R. D. and Weakliem, H. A., J. Phys. Chem. 88, 73 (1984).CrossRefGoogle Scholar
12. Knights, J. C., J. Non Cryst. Sol. 35/36, 159 (1980).CrossRefGoogle Scholar
13. Chang, C.-A., J. Electrochem. Soc. 123, 1245 (1976).CrossRefGoogle Scholar
14. Knights, J. C. in “The Physics of Hydrogenated Amorphous Silicon”, Topics In Applied Physics 55, ed. by Joannopoulos, J. D. and Lucovsky, G., Springer Verlag, Berlin (1984).Google Scholar
15. Reimer, J. A., Vaughan, R. W. and Knights, J. C., Phys. Rev. B24, 3360 (1981).CrossRefGoogle Scholar
16. Graebner, J. E., Golding, B., Allen, L. C., Knights, J. C. and Biegelsen, D. K., Phys. Rev. B 29, 3744 (1984).CrossRefGoogle Scholar
17. Lucovsky, G., Nemanich, R. J. and Knights, J. C., Phys. Rev. B19, 2064 (1979).CrossRefGoogle Scholar
18. Chabal, Y. J. and Patel, C. K. N., Phys. Rev. Lett. 53, 210 (1984).CrossRefGoogle Scholar
19. Knights, J. C. and Lujan, R. A., Appl. Phys. Lett. 35, 244 (1979).CrossRefGoogle Scholar
20. Leadbetter, A. J., Rashid, A. A. M., Richardson, R. M., Wright, A. F. and Knights, J. C., Solid State Comm. 33, 973 (1980).CrossRefGoogle Scholar
21. Dirks, A. G. and Leamy, H. J., Thin Solid Films 47, 219 (1977).CrossRefGoogle Scholar
22. Dietderich, D., Sanchez, J. and Knights, J. C., to be published.Google Scholar
23. Blech, I. A. and Plas, H. A. Vander, J. Appl. Phys 54, 3489 (1983).CrossRefGoogle Scholar
24. Van den Brekel, C. H. J. and Jansen, A. K., J. Crystal Growth 43, 488 (1978).CrossRefGoogle Scholar
25. Ross, R. C. and Vossen, J. L., Appl. Phys. Lett. 45, 239 (1984).CrossRefGoogle Scholar
26. Knights, J. C., Solar Cells 2, 409 (1980).CrossRefGoogle Scholar