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Plasma Deposition and Interface Control in Low Temperature Processing of Thin Film Solar Cells

Published online by Cambridge University Press:  10 February 2011

B. Jagannathan  and
W. A. Anderson
B. Jagannathan
Affiliation:
Present Address: IBM Microelectronics, Hopewell Junction, NY 12533
W. A. Anderson
Affiliation:
Department of Electrical and Computer Eng., State University of New York at Buffalo, Amherst, NY 14260
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Abstract

Plasma deposition of thin silicon films with a variable microstructure and controlled interface formation techniques are being developed for thin film silicon/polycrystalline silicon solar cells. Low hydrogen content amorphous (a-Si) or microcrystalline silicon (μ c-Si) films were obtained by controlling the H2 dilution of 2% SiH4/He in a microwave ECR discharge. The films were characterized for structural and electro-optic properties. Junction creation for solar cells was investigated by depositing single or multilayers of the film silicon onto crystalline silicon (c-Si). Effort to improve carrier transport and photovoltaic (PV) properties was pursued through interface modifications effected by varying the microstructure of the layer in contact with the substrate. Cells with 7% conversion efficiency (No A/R) were obtained for an a-Si/c-Si heterojunction configuration. Improved carrier transport and PV properties (9% ef ficient) were achieved by inserting a thin μ c-Si layer in the above structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 31
Copyright
Copyright © Materials Research Society 1998

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