Article contents
Planar Laser-Induced Fluorescence Diagnostics of Pulsed Laser Ablation of Silicon
Published online by Cambridge University Press: 21 February 2011
Abstract
Planar laser-induced fluorescence has been used to acquire time sequence images of ground-state, neutral Si and SiO during laser ablation of an Si target in vacuum and in the presence of a background gas at a fluence of 3-4 J/cm2. the SiO images, taken in air, strongly suggest that the observed SiO is created through reaction of silicon with oxygen at the contact front as the plume expands.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1995
References
- 2
- Cited by