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PL due to Discrete Gap Levels in Some Chalcogenide Glasses- A Configurational Coordinate Diagram Illustration

Published online by Cambridge University Press:  21 March 2011

N. Asha Bhat ,
K.S. Sangunni  and
K.S.R.K. Rao
N. Asha Bhat
Affiliation:
Department of Physics, Indian Institute of Science Bangalore –560 012, INDIA
K.S. Sangunni
Affiliation:
Department of Physics, Indian Institute of Science Bangalore –560 012, INDIA
K.S.R.K. Rao
Affiliation:
Department of Physics, Indian Institute of Science Bangalore –560 012, INDIA
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Abstract

Photoluminescence (PL) studies were carried out on a-Se and a few Ge20Se80−xBix and Ge20Se70−xBixTe10 bulk glassy semiconductors at 4.2 K with Ar+ laser as excitation source. While a-Se and samples with lesser at% of Bi show fine structured PL with a large Stokes shift, samples with higher at% of Bi did not show any detectable PL. The investigations show at least three radiative recombination transitions. Features extracted by deconvoluting the experimental spectra show that the discrete gap levels associated with the inherent coordination defects are involved in the PL transitions. Absence of PL in samples with higher Bi at% are explained on the basis of nonradiative transition mechanisms. Overall PL mechanism involving gap levels in chalcogenide glasses is illustrated with the help of a configurational coordinate diagram.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 667: Symposium G – Luminescence and Luminescent Materials , 2001 , G3.4
Copyright
Copyright © Materials Research Society 2001

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