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PL and FTIR Absorption Study on Porous Silicon in Situ During Etching, in Oxygen Ambient, and After Chemical Oxidation

Published online by Cambridge University Press:  28 February 2011

G. Mauckner ,
T. Walter ,
T. Baier ,
K. Thonke  and
R. Sauer Abteilung
G. Mauckner
Affiliation:
Halbleiterphysik, Universität Ulm 7900 Ulm, GERMANY
T. Walter
Affiliation:
Halbleiterphysik, Universität Ulm 7900 Ulm, GERMANY
T. Baier
Affiliation:
Halbleiterphysik, Universität Ulm 7900 Ulm, GERMANY
K. Thonke
Affiliation:
Halbleiterphysik, Universität Ulm 7900 Ulm, GERMANY
R. Sauer Abteilung
Affiliation:
Halbleiterphysik, Universität Ulm 7900 Ulm, GERMANY
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Abstract

Steady state and time-resolved photoluminescence (PL) and Fourier-transform infrared (FTIR) spectroscopy have been performed in situ during etching, on “as prepared” porous Si in air under laser exposure and on chemically oxidized porous Si. We suppose that PLdegradation of “as prepared” porous Si is caused by creating non-radiative defect centers during photooxidation. Chemically oxidized porous Si shows increased PL intensity and longer recombination lifetimes as compared to non-oxidized samples. We conclude, that an oxide layer with low defect density on the inner surface of chemically oxidized porous Si reduces the non-radiative recombination rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 109
Copyright
Copyright © Materials Research Society 1993

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References

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