Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-27T02:12:04.417Z Has data issue: false hasContentIssue false
  • English
  • Français

Piezoresistor Sensor Fabrication by Direct Laser Writing on Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  13 March 2014

P. Alpuim ,
M.F. Cerqueira ,
G. Junior ,
J. Gaspar  and
J. Borme
P. Alpuim
Affiliation:
Department of Physics, Universidade do Minho, Campus de Gualtar, 4715-057 Braga, Portugal. INL – International Iberian Nanotechnology Laboratory, Av. Mestre José Veiga, 4715-330 Braga, Portugal.
M.F. Cerqueira
Affiliation:
Department of Physics, Universidade do Minho, Campus de Gualtar, 4715-057 Braga, Portugal.
G. Junior
Affiliation:
INL – International Iberian Nanotechnology Laboratory, Av. Mestre José Veiga, 4715-330 Braga, Portugal.
J. Gaspar
Affiliation:
INL – International Iberian Nanotechnology Laboratory, Av. Mestre José Veiga, 4715-330 Braga, Portugal.
J. Borme
Affiliation:
INL – International Iberian Nanotechnology Laboratory, Av. Mestre José Veiga, 4715-330 Braga, Portugal.
Get access

Abstract

In this paper we report on the 532 nm Nd:YAG laser-induced crystallization of 10 nm thick boron-doped hydrogenated amorphous silicon thin films deposited on flexible polyimide and on rigid oxidized silicon wafers by hot-wire or by plasma-enhanced chemical vapor deposition. The dark conductivity increased from ∼10-7 Ω-1cm-1, in the as-deposited films, to ∼10 and 50 Ω-1cm-1 after laser irradiation, on rigid and flexible substrates, respectively. Depending on type of substrate, laser power and fluence, a Raman crystalline fraction between 55 and 90 % was measured in HWCVD films, which was higher than observed in rf-PECVD films (35-55 %). Crystallite size remained small in all cases, in the range 6-8 nm. Due to a very high conductivity contrast (>7 orders of magnitude) between amorphous and crystallized regions, it was possible to define conductive paths in the a-Si:H matrix, by mounting the sample on a X-Y software-controlled movable stage under the laser beam, with no need for the usual lithography steps. The resistors scribed by direct laser writing had piezoresistive properties, with positive gauge factor ∼1. The details of the laser interaction process with the Si film were revealed by scanning electron microscopy imaging.

Keywords

chemical vapor deposition (CVD) (deposition)laser annealingRaman spectroscopy
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1594: Symposium K – Cat-CVD (Hot-Wire CVD) and Related Technologies , 2014 , jsapmrs13-1594-6868
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Fojtík, P., Dohnalová, K., Mates, T., Stuchlík, J., Gregor, I., Chval, J., Fejfar, A., Kočka, J. and Pelant, I., Phil. Mag. B 82(17), 1785 (2002)CrossRefGoogle Scholar
Nguyen, H. V., An, I., Collins, R. W., Lu, Y., Wakagi, M., and Wronski, C. R., Appl. Phys. Lett. 66(26), 3609 (1995)Google Scholar
Roca i Cabarrocas, P., Layadi, N., Heitz, T., Drévillon, B., and Solomon, I., Appl. Phys. Lett. 65(26), 3335 (1994)Google Scholar
Filonovich, S.A., Ribeiro, M., Rolo, A.G., Alpuim, P., Thin Solid Films 516, 576 (2008)CrossRefGoogle Scholar
Lee, Y.-J., Kwon, J.-D., Kim, D.-H., Nam, K.-S., Jeong, Y., Kwon, S.-H., Park, S.-G., Thin Solid Films 542, 388 (2013)CrossRefGoogle Scholar
Gontad, F., Conde, J.C., Filonovich, S., Cerqueira, M.F., Alpuim, P., Chiussi, S., Thin Solid Films 536, 147 (2013)CrossRefGoogle Scholar
Alpuim, P., Gaspar, J., Gieschke, P., Ehling, C., Kistner, J., Gonçalves, N. J., Vasilevskiy, M. I., and Paul, O., J. Appl. Phys. 109, 123717 (2011)CrossRefGoogle Scholar
Kaneko, T., Wakagi, M., Onisawa, K., and Minemura, T., Appl. Phys. Lett. 64, 1865 (1994)CrossRefGoogle Scholar