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Piezoresistive Sensors on Plastic Substrates Using Doped Microcrystalline Silicon

Published online by Cambridge University Press:  17 March 2011

P. Alpuim ,
V. Chu  and
J. P. Conde
P. Alpuim
Affiliation:
Instituto de Engenharia de Sistemas e Computadores (INESC), Rua Alves Redol, 9, 1000-029 Lisbon, Portugal Department of Materials Engineering, Instituto Superior Técnico, Av. Rovisco Pais, 1049-001 Lisbon, Portugal
V. Chu
Affiliation:
Instituto de Engenharia de Sistemas e Computadores (INESC), Rua Alves Redol, 9, 1000-029 Lisbon, Portugal
J. P. Conde
Affiliation:
Department of Materials Engineering, Instituto Superior Técnico, Av. Rovisco Pais, 1049-001 Lisbon, Portugal
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Abstract

The piezoresistive behavior of optimized n-type and p-type microcrystalline silicon films deposited on polyethylene terephthalate plastic substrate by hot-wire and radio-frequency plasma-enhanced chemical vapor deposition, at a substrate temperature of 100 °C, is studied. A 4-point bending jig allowed the application of positive and negative strains in the films. Repeated measurements of the relative changes in the resistance of the samples during the strained condition showed reversible behavior, with p-type microcrystalline films having positive gauge factor in the range from 25 to 30 and n-type [.proportional]c-Si:H films having negative values of gauge factor from -40 to -10. The induced strain in the films was in the range between 0 and ±0.3%. A sensor utilizing the piezoresistive property of doped [.proportional]c-Si:H was used to map a contour with the shape of an Archimedes' spiral.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A18.6
Copyright
Copyright © Materials Research Society 2001

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References

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