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Piezoresistance in Strained Silicon and Strained Silicon Germanium

Published online by Cambridge University Press:  01 February 2011

Jacob Richter ,
M. B. Arnoldus ,
J. Lundsgaard Hansen ,
A. Nylandsted Larsen ,
O. Hansen  and
E. V. Thomsen
Jacob Richter
Affiliation:
[email protected], Technical University of Denmark, Department of Micro and Nanotechnology, Building 345est, Kgs Lyngby, 2800, Denmark, +45 4525 5700
M. B. Arnoldus
Affiliation:
[email protected], Technical University of Denmark, Department of Micro and Nanotechnology, Building 345east, Kgs Lyngby, DK-2800, Denmark
J. Lundsgaard Hansen
Affiliation:
[email protected], University of Aarhus, Department of Physics and Astronomy, Ny Munkegade, Building 1520, Aarhus C, DK-8000, Denmark
A. Nylandsted Larsen
Affiliation:
[email protected], University of Aarhus, Department of Physics and Astronomy, Ny Munkegade, Building 1520, Aarhus C, DK-8000, Denmark
O. Hansen
Affiliation:
[email protected], Technical University of Denmark, Department of Micro and Nanotechnology, Building 345east, Kgs Lyngby, DK-2800, Denmark
E. V. Thomsen
Affiliation:
[email protected], Technical University of Denmark, Department of Micro and Nanotechnology, Building 345east, Kgs Lyngby, DK-2800, Denmark
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Abstract

This paper presents experimental results of the piezoresistance in p-type tensile strained silicon and compressive strained silicon germanium grown by molecular beam epitaxy (MBE) on (001) silicon substrates. The piezoresistance decreases in a tensile strained layer and increases in a compressive strained layer when compared to the unstrained material. The results show that one can tune the piezoresistance by tuning the strain in the piezoresistor and thus tailor the performance of the device. The obtained results show an increase in the piezoresistance effect of 35% in compressive strained silicon germanium and a decrease in the piezoresistance effect in tensile strained silicon of 24%. Furthermore, the results show that the piezoresistance of a tensile strained silicon crystal has a smaller temperature dependency compared to that of unstrained silicon. The piezoresistance effect decreases by 7% in tensile strained silicon compared to the piezoresistance effect decrease in silicon of 18% when changing the temperature from 30°C to 80°C.

Keywords

Simolecular beam epitaxy (MBE)microelectro-mechanical (MEMS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 958: Symposium L – Group IV Semiconductor Nanostructures—2006 , 2006 , 0958-L04-06
Copyright
Copyright © Materials Research Society 2007

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References

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