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Piezoresistance and Quantum Confinement in Microcrystalline Silicon

Published online by Cambridge University Press:  15 February 2011

J. S. Foresi  and
T. D. Moustakas
J. S. Foresi
Affiliation:
Boston University, Department of Electrical Engineering, 44 Cummington St., Boston MA 02215
T. D. Moustakas
Affiliation:
Boston University, Department of Electrical Engineering, 44 Cummington St., Boston MA 02215
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Abstract

We report piezoresistance studies in microcrystalline silicon films produced by reactive sputtering from a silicon target in an atmosphere of hydrogen and argon. The microcrystalline silicon films are two phase materials consisting of 50-100Å diameter silicon crystallites embedded in an amorphous Si-Hx matrix. The conductivity of the films was found to decrease significantly when the films were put under compression. Conductivity decreases of up to 100% were observed; this large conductivity changes with strain indicate that microcrystalline silicon is ideally suited for highly sensitive strain gauge applications. The results can be qualitatively accounted for in a model which assumes quantum confinement of carriers in 50Å diameter silicon crystallites separated by tunnelable amorphous Si-Hx barriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 77
Copyright
Copyright © Materials Research Society 1992

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References

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