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Piezoelectric Properties of Sol-Gel Derived PZT Thin Films with Various Zr/Ti Ratios

Published online by Cambridge University Press:  10 February 2011

G. Teqwee
Affiliation:
Donnelly Corporation, 4545 East Fort Lowell Road, Tucson, AZ 85712
K. C. McCarthy
Affiliation:
Donnelly Corporation, 4545 East Fort Lowell Road, Tucson, AZ 85712
F. S. McCarthy
Affiliation:
Donnelly Corporation, 4545 East Fort Lowell Road, Tucson, AZ 85712
D. G. Davis Jr
Affiliation:
Donnelly Corporation, 4545 East Fort Lowell Road, Tucson, AZ 85712 Department of Materials Science and Engineering, University of Arizona, Tucson, AZ 85721.
J. T. Dawley
Affiliation:
Department of Materials Science and Engineering, University of Arizona, Tucson, AZ 85721.
B.J.J. Zelinski
Affiliation:
Department of Materials Science and Engineering, University of Arizona, Tucson, AZ 85721.
D. R. Uhlmann
Affiliation:
Department of Materials Science and Engineering, University of Arizona, Tucson, AZ 85721.
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Abstract

Piezoelectric thin films are useful for application in microelectromechanical devices. A series of sol-gel derived PZT (lead zirconate titanate) thin films with various Zr/Ti ratios were prepared on platinized substrates. These films were fired to 650C - 700C to crystallize them into single-phase perovskite films, and their piezoelectric properties were measured using optical lever-based instrumentation. Large d33 piezoelectric coefficients up to 400 pm/V were obtained at the morphotropic phase boundary (PZT 53/47), making such films attractive in applications such as thin film transducers, microcanti levers and surface acoustic wave devices.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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