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Picosecond time-resolved studies of defect-related recombination in high resistivity CdTe, CdZnTe

Published online by Cambridge University Press:  10 February 2011

G. Ghislotti ,
D. Ielmini ,
E. Riedo  and
M. Martinelli
G. Ghislotti
Affiliation:
present address: Pirelli Cavi e Sistemi, v.le Sarca 222, 20126 Milano
D. Ielmini
Affiliation:
also with: Dipartimento di Ingegneria Nucleare, Politecnico di Milano
E. Riedo
Affiliation:
also with: Dipartimento di Scienza dei Materiali, Universitä degli Studi di Milano
M. Martinelli
Affiliation:
Corecom, via Ampere 30, 20131 Milano
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Abstract

High resistivity CdTe:In and CdZnTe samples were studied by means of continuos and picosecond time-resolved photoluminescence (PL). Detected PL signal is affected by non-radiative trapping into defects, while radiative recombination has an excitonic character. Time-resolved PL can be described by two lifetimes: the first (30-60 ps) takes into account fast non radiative recombination, the second in the range 200-300 ps can be related to exciton decay.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 601
Copyright
Copyright © Materials Research Society 1998

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References

[1] Szeles, R., in Infrared Applications of Semiconductors II, edited by Sivananthan, S., Manasreh, M.O., Miles, R.H., McDaniel, D.L., (Mat. Res. Soc. Proc. 484, Pittsburgh, PA, 1997)Google Scholar
[2] Partovi, A., Millerd, J., Garmire, E. M., Ziari, M., Steier, W. H., Trivedi, S. B., and Klein, M.B., Appl. Phys. Lett. 77, 2806 (1995)Google Scholar
[3] Boffi, P. and Martinelli, M., Optics Letters 20, 6, 641 (1995)Google Scholar
[4] Stadler, W., Hofmann, D.M., Alt, H.C., Muschik, T., Meyer, B.K., Weigel, E., Mciller-Vogt, G., Salk, M., Rupp, E. and Benz, K.W., Phys. Rev. B 51, 16, 10619 (1995)Google Scholar
[5] Lee, J., Giles, N.C., Rajavel, D. and Summers, C.J., Phys. Rev. B 49, 3, 1668 (1992)Google Scholar
[6] Reno, J.L. and Jones, E.D., Phys. Rev. B 45, 1440 (1992)Google Scholar
[7] Schmidt, T., Lischka, K. and Zulehner, W., Phys. Rev. B 45, 16, 8989 (1992)Google Scholar
[8] Kash, J.A., Ron, A. and Cohen, E., Phys. Rev. B 28, 6147 (1983)Google Scholar
[9] Henry, C.H. and Nassau, K., Phys. Rev. B 1, 1628 (1970)Google Scholar
[10] Rosenwaks, Y., Shapira, Y. and Huppert, D., Phys. Rev. B 45, 16, 9108 (1992)Google Scholar
[11] Eiche, C., Maier, D., Sinerius, D., Weese, J., Benz, K.W., Honerkamp, J., J. Appl. Phys. 74, 11, 6667 (1993)Google Scholar
[12] Ido, T., Heurtel, A., Triboulet, R. and Marfaing, Y., J. Phys. Chem. Solids 48 (9) 781 (1987)Google Scholar
[13] Castaldini, A., Cavallini, A., Fraboni, B., Polenta, L., Fernandez, P. and Piqueras, J., Phys. Rev. B 54, 11, 7622 (1996)Google Scholar
[14] Takebe, T., Saraie, J. and Matsunami, H., J. Appl. Phys. 53, 1, 457 (1982)Google Scholar