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Picosecond time-resolved studies of defect-related recombination in high resistivity CdTe, CdZnTe

Published online by Cambridge University Press:  10 February 2011

G. Ghislotti ,
D. Ielmini ,
E. Riedo  and
M. Martinelli
G. Ghislotti
Affiliation:
present address: Pirelli Cavi e Sistemi, v.le Sarca 222, 20126 Milano
D. Ielmini
Affiliation:
also with: Dipartimento di Ingegneria Nucleare, Politecnico di Milano
E. Riedo
Affiliation:
also with: Dipartimento di Scienza dei Materiali, Universitä degli Studi di Milano
M. Martinelli
Affiliation:
Corecom, via Ampere 30, 20131 Milano
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Abstract

High resistivity CdTe:In and CdZnTe samples were studied by means of continuos and picosecond time-resolved photoluminescence (PL). Detected PL signal is affected by non-radiative trapping into defects, while radiative recombination has an excitonic character. Time-resolved PL can be described by two lifetimes: the first (30-60 ps) takes into account fast non radiative recombination, the second in the range 200-300 ps can be related to exciton decay.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 601
Copyright
Copyright © Materials Research Society 1998

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