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Picosecond Time-Resolved Optical Studies of Plasma Formation and Lattice Heating in Silicon

Published online by Cambridge University Press:  22 February 2011

L. A. Lompré ,
J. M. Liu ,
H. Kurz  and
N. Bloembergen
L. A. Lompré
Affiliation:
C.E.N. Saclay, DPh.G./S.P.A.S., 91191 Gif-sur- Yvette, France;
J. M. Liu
Affiliation:
Department of Electrical and Computer Engineering, Bell Hall, Suny at Buffalo, Amherst, NY 14260
H. Kurz
Affiliation:
Division of Applied sciences, Harvard University, Cambridge, MA 02138;
N. Bloembergen
Affiliation:
Division of Applied sciences, Harvard University, Cambridge, MA 02138;
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Abstract

Time-resolved studies of reflectivity and transmission at 0.532 μm, 1.064 vm and 2.8 μm of thin silicon films following irradiation with ps pulses at 0.532 μm have been performed. The formation of the electron-hole plasma and the evolution of lattice temperature is investigated as a function of pump fluence and time delay. Quantitative determination of the plasma densities and lattice temperature up to the melting temperature shows that the maximum plasma density is limited to ∼ 1 × 1021 cm−3 by Auger recombination even on a time scale of picoseconds at fluences sufficient to cause the phase transition. The thermal nature of the phase transition is confirmed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 57
Copyright
Copyright © Materials Research Society 1984

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References

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