Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T17:40:48.805Z Has data issue: false hasContentIssue false
  • English
  • Français

Picosecond Nonlinear Optical Response of Copper Clusters Created by Ion Implantation in Fused Silica

Published online by Cambridge University Press:  15 February 2011

R. H. Magruder III ,
R. F. Haglund Jr. ,
L. Yang ,
J. E. Wittig ,
K. Becker  and
R. A. Zuhr
R. H. Magruder III
Affiliation:
Magruder, Haglund, Yang, Wittig, BeckerDepartment of Materials Science and EngineeringVanderbilt University, Nashville, TN 37235
R. F. Haglund Jr.
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235
L. Yang
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235
J. E. Wittig
Affiliation:
Magruder, Haglund, Yang, Wittig, BeckerDepartment of Materials Science and EngineeringVanderbilt University, Nashville, TN 37235
K. Becker
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235
R. A. Zuhr
Affiliation:
Zuhr Solid-State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
Get access

Abstract

We have embedded nm-size Cu clusters in optically dense, thin (∼ 150 nm) layers using standard ion implantation techniques. The size and size distribution of the clusters can be altered by varying such ion-implantation parameters as total dose and current density. The layers exhibit both a thermo-optic and an electronic nonlinear optical response, depending on the mode of laser excitation. The electronic nonlinearity has a response time no longer than 5 ps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 244: Symposium J – Optical Waveguide Materials , 1991 , 369
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lines, M. E., J. Appl. Phys. 69 (1991) 6875–6884.Google Scholar
2. Hache, F., Ricard, D., Flytzanis, C. and Kreibig, U., Appl. Phys. A 47 (1988) 347–357.CrossRefGoogle Scholar
3. Bloemer, M. J., Haus, J. W. and Ashley, P. R., J. Opt. Soc. Am. B 7 (1990) 790–795.10.1364/JOSAB.7.000790Google Scholar
4. Haus, J. W., Kalyaniwalla, N., Inguva, R., Bloemer, M. and Bowden, C. M., J. Opt. Soc. Am. B 6 (1989) 797–807.Google Scholar
5 Haus, J. W., Inguva, R. and Bowden, C. M., Phys. Rev. A 40 (1989) 5729.Google Scholar
6. Sheik-Bahae, M. et al., IEEE J. Quantum Elect. 26 (1990) 760–769.Google Scholar
7. Yang, L., Haglund, R. F. Jr., Becker, K., Magruder, R. H. III, Wittig, J. E. and Zuhr, R. A., to be submitted to Opt. Lett.Google Scholar