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Picosecond Laser Pulse Induced Damage in Crystalline Silicon

Published online by Cambridge University Press:  15 February 2011

K. L. Merkle ,
R. H. Uebbing ,
H. Baumgart  and
F. Phillipp
K. L. Merkle
Affiliation:
Max-Planck-Institut für Metallforschung and Max-Planck-Institut für Festkörperforschung, Federal Republic of Germany
R. H. Uebbing
Affiliation:
Max-Planck-Institut für Metallforschung and Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D–7000 Stuttgart 80, Federal Republic of Germany
H. Baumgart
Affiliation:
Max-Planck-Institut für Metallforschung and Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D–7000 Stuttgart 80, Federal Republic of Germany
F. Phillipp
Affiliation:
Max-Planck-Institut für Metallforschung and Max-Planck-Institut für Festkörperforschung, Federal Republic of Germany
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Abstract

Picosecond laser pulse irradiation of single crystalline Si can produce severe damage, including amorphisation. Morphology changes are studied by means of optical and high-voltage-electron microscopy and are found to depend on energy fluence, surface orientation, and wavelength. The detailed analysis of the damage distributions and thresholds lead to the conclusion, that energy-confinement precedes the introduction of structural changes, which are formed by rapid quenching from the liquid state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 337
Copyright
Copyright © Materials Research Society 1982

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References

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