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Physical Properties and Diffusion Characteristics of CVD-Grown TiSiN Films

Published online by Cambridge University Press:  17 March 2011

Dalaver Anjum ,
Katharine Dovidenko ,
Serge Oktyabrsky ,
Eric Eisenbraun  and
Alain E. Kaloyeros
Dalaver Anjum
Affiliation:
UAlbany Institute for Materials and School of Nanosciences and Engineering, University at Albany-SUNY, Albany, 12222
Katharine Dovidenko
Affiliation:
UAlbany Institute for Materials and School of Nanosciences and Engineering, University at Albany-SUNY, Albany, 12222
Serge Oktyabrsky
Affiliation:
UAlbany Institute for Materials and School of Nanosciences and Engineering, University at Albany-SUNY, Albany, 12222
Eric Eisenbraun
Affiliation:
UAlbany Institute for Materials and School of Nanosciences and Engineering, University at Albany-SUNY, Albany, 12222
Alain E. Kaloyeros
Affiliation:
UAlbany Institute for Materials and School of Nanosciences and Engineering, University at Albany-SUNY, Albany, 12222
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Abstract

TiSiN films grown by chemical vapor deposition were characterized to evaluate the properties relevant to the application as a diffusion barrier in Cu-based interconnects. The films were grown using TiI4 + SiI4 + NH3 + H2 chemistry at substrate temperature, 370°C, and SiI4 - to-TiI4 precursor flow rate ratio of 30. The combined results from x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) revealed that the bulk of Ti32Si21N42 films were predominantly consisted of a mixture of cubic TiN and amorphous SiNx phases. The specific electrical resistivity of the films was about 2000 μΩcm which is a few times higher than that of sputtered TiSiN films having similar composition and thicknesses. The 40 nm-thick barrier appeared to be thermally stable against Cu diffusion at the annealing temperatures up to 550°C. Breakdown of this diffusion barrier occurred at 600°C and was accompanied by the formation of Cu3Si protrusions at the TiSiN/Si interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 697: Symposium P – Surface Engineering 2001--Fundamentals and Applications , January 2001 , P8.18
Copyright
Copyright © Materials Research Society 2002

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References

1. Small, M. B. and Pearson, D. J., IBM J. Res. Dev. 34, 858 (1990).Google Scholar
2. Broniatowski, A., Phys. Rev. Lett., 62, 3074 (1989).Google Scholar
3. Fumimura, N., Nishida, N., Ito, L., Nakayama, Y., Mater. Sci. Eng. A 108, 153 (1989).Google Scholar
4. Chamberlain, M. B., Thin Solid Films, 91, 155 (1982).Google Scholar
5. Reid, J. S., Kolawa, E., Garland, C. M., Nicolet, M.-A., Cardone, F., Gupta, D., and Ruiz, R. P., J. Appl. Phys., 79, 1109 (1996).Google Scholar
6. Saris, F. W., Hung, L. S., Nastasi, M., Mayer, J. W., and Whitehead, B., Appl. Phys. Lett., 46, 646, (1985).Google Scholar
7. Anjum, D., Oktyabrsky, S., Eisenbraun, E., Kaloyeros, A. E., Effect of Silicon Concentration in CVD-grown Ti-Si-N Thin Films for Diffusion Barrier Applications in Modern Integrated Circuits, Symposium of Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics, Materials Research Society Conference, San Francisco April 16-20 (2001)Google Scholar
8. Delfino, M., Fair, J. R., and Hodul, D., J. Appl. Phys., 71, 6079 (1992).Google Scholar
9. Prieto, P. and Kirby, R. E., J. Vac. Sci. Technol. A, 13, 2819 (1995).Google Scholar
10.R. Van Weeren, Leone, E. A., Curran, S., Klein, L. C., and Danforth, S. C., J. Am. Ceram. Soc., 77, 2699 (1994).Google Scholar
11. Moulder, J. F., Stickle, W. F., Sobol, P. E., and Bomben, K. D., Handbook of X-ray Photoelectron Spectroscopy, edtited by Chastain, J. (Perkin Elmer, Eden Prairie, MN, 1993).Google Scholar
12. Mirza, J. M., TiSiN Thin Films for Gigascale Cu Interconnect Applications, Ph. D. Thesis, University at Albany-SUNY, pp.80–100 (2000).Google Scholar
13. Schuster, J. C., J. Solid. State. Chem., 53, 260 (1984).Google Scholar
14. Sambasivan, S. and Petuskey, W. T., J. Mater. Res., 9 (9), 2362 (1994).Google Scholar
15. Shalish, I. and Shapira, Y., J. Vac. Sci. Technol. B, 17, 166 (1999).Google Scholar