Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-19T04:49:12.848Z Has data issue: false hasContentIssue false
  • English
  • Français

Physical Model and Numerical Results of Dissociation Kinetics of Hydrogen-Passivated Si/SiO2 Interface Defects

Published online by Cambridge University Press:  10 February 2011

G. V. Gadiyak
G. V. Gadiyak*
Affiliation:
Institute of Computational Technologies, Russian Academy of Sciences Siberian, Division, Novosibirsk, 630090, RussiaTel: +7-(3832) 35–02–80, Fax: +7-(3832) 35–12–42, E-mail: [email protected]
Get access

Abstract

A simple model of thermal dissociation and recovery of hydrogen-passivated silicon defects at the Si/SiO2 interface, such as Pb - centers, during vacuum thermal annealing has been suggested. This model considers reactions of hydrogen with defect states at the Si/SiO2 interface and diffusion of liberated atomic and molecular hydrogen in a silicon dioxide film. An excellent agreement was obtained between the experimental and numerical simulation results for oxides with different thickness (200–1024 Å), grown both (111) and (100) samples and annealed in the temperature range (480–700° C).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 71
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Saks, N.S. and Brown, D.B. in The Physics and Chemistry of SiO2 and the SiO2 Interface 2, edited by Helms, C.R. and Deal, B.E. (Plenum, New York, 1993), p. 445.Google Scholar
2. Nissan-Cohen, Y. and Gorczyca, T., IEEE Elect. Dev. Lett. 9, 287 (1988).Google Scholar
3. Brower, K.L. and Meyers, S.M., Appl. Phys. Lett., 57, 162 (1990).Google Scholar
4. Brower, K.L., Appl. Phys. Lett., 43, 1111 (1983).Google Scholar
5. Lenahan, P.M. and Dressendorfer, P.V., J. Appl. Phys., 55, 3495 (1984).Google Scholar
6. Poindexter, E.H., Caplan, P.J., Deal, B.E., and Razouk, R.R., J. Appl. Phys., 52, 879 (1981).Google Scholar
7. Stathis, J.H., J. Appl. Phys., 77, 6205 (1995);Google Scholar
Stathis, J.H., J. Appl. Phys. 78, 5215 (1995).Google Scholar