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Physical and Chemical Properties of Silicon Dioxide Film Deposited by New Process

Published online by Cambridge University Press:  22 February 2011

Takuji Goda ,
Hirotsugu Nagayama ,
Akihiro Hishinuma  and
Hideo Kawahara
Takuji Goda
Affiliation:
Central Research Laboratory, Nippon Sheet Glass Co., Ltd., Konoike, Itami, Hyogo, Japan
Hirotsugu Nagayama
Affiliation:
Central Research Laboratory, Nippon Sheet Glass Co., Ltd., Konoike, Itami, Hyogo, Japan
Akihiro Hishinuma
Affiliation:
Central Research Laboratory, Nippon Sheet Glass Co., Ltd., Konoike, Itami, Hyogo, Japan
Hideo Kawahara
Affiliation:
Central Research Laboratory, Nippon Sheet Glass Co., Ltd., Konoike, Itami, Hyogo, Japan
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Abstract

A new coating process of silicon dioxide (SiO2) “LPD” process, has been developed recently. Silicon dioxide (SiO2) film can be deposited on any substrate at the room temperature by immersing in hexafluorosilicic acid (H2SiF6).

In this study, physical and chemical properties of the “LPD- SiO2” film were investigated by using XPS, IR, ellipsometry, and etch rate measurement. The properties of this film deposited at the room temperature were almost the same as those of plasma CVD. The “LPD-SiO2” film without annealing was contained traces of F and OH. However, by annealing, F and OH were rapidly evaporated from the film and the film was getting densified.

As the “LPD-SiO2” film deposited at the room temperature showed very good results of chemical etching rate and of step coverage, it is expected that it is possible to use this “LPD- SiO2” film in the wide range of industrial area.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 283
Copyright
Copyright © Materials Research Society 1988

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